2SK2897-01MR_05 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Item Symbol Rating Unit Remarks Drain-source voltage V DS 60 Continuous drain current I D ±45 Pulsed drain current I D[puls] ±180 Gate-source peak voltage V GS ±20 Maximum avalanche energy E AV 461.9 Maximum power dissipation P D 40 Operating and storage T ch +150 temperature range T stg 2SK2897-01MRFUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) V A A V mJ W °C-55 to +150 FAP-IIIB SERIES Electrical characteristics (Tc =25°C unless otherwise specified) Thermal characteristics Item Symbol Zero gate voltage drain current IDSS Min. Typ. Max. Units V V µA mA nA mΩ mΩ S pF ns A V ns µC Min. Typ. Max. Units Thermal resistance Rth(ch-c) Rth(ch-a) 3.125 62.5 °C/W °C/W Symbol V (BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V VGS=0V Tch=25°C Tch=125°C VGS=±20V VDS=0V ID=22.5A VGS=10V ID=22.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V RG=10 Ω ID=45A VGS=10V L=100µH Tch=25°C IF=45A VGS=0V Tch=25°C IF=45A -di/dt=100A/µs Tch=25°C 1.0 1.5 2.0 10 500 0.2 1.0 10 100 15 20 10 12 15 35 2900 4350 930 1400 260 390 13 30 35 50 190 290 75 140 0.95 1.43 0.10 Gate(G) Source(S) Drain(D) Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof

Applications

General purpose power amplifier www.fujielectric.co.jp/fdt/scd *1 L=0.304mH, Vcc=24V Item Drain-source breakdown voltage Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge VGS=4V VGS=10V 200509

2SK2897-01MRFUJI POWER MOSFET

FUJI POWER MOSFET 2SK2897-01MR

2SK2897-01MRFUJI POWER MOSFET www.fujielectric.co.jp/fdt/scd