2SK2869-ZJ KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

www.kexin.com.cn 1 MOSF ET N-Channel MOSFET 2SK2869-ZJ ■ Features

  • VDS (V) = 60V
  • ID = 20 A (VGS = 10V)
  • RDS(ON) ＜ 45mΩ (VGS = 10V)
  • RDS(ON) ＜ 70mΩ (VGS = 4V)
  • High speed switching ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 20 Pulsed Drain Current (Note.1) IDM 80 Body to Drain Diode Reverse Drain Current IDR 20 Avalanche Current (Note.2) IAR 20 Power Dissipation (Note.3) PD 30 W Avalanche Energy (Note.2) EAR 34 mJ Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10us, duty cycle ≤ 1 % Note.2: Value at Tch = 25°C, Rg ≥ 50 Ω Note.3: Value at Tc = 25°C D G S

www.kexin.com.cn2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=10mA, VGS=0V 60 Gate-Source Breakdown Voltage VGSS ID=±100uA, VDS=0V ±20 Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±16V ±10 uA Gate to Source Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.5 V VGS=10V, ID=10A 45 VGS=4V, ID=10A 70 Forward Transconductance gFS VDS=10V, ID=10A 10 16 S Input Capacitance Ciss 740 Output Capacitance Coss 380 Reverse Transfer Capacitance Crss 140 Turn-On DelayTime td(on) 10 Turn-On Rise Time tr 110 Turn-Off DelayTime td(off) 105 Turn-Off Fall Time tf 120 Body Diode Reverse Recovery Time trr IF= 20A, VGS=0, dI/dt= 50 A/μs 40 Diode Forward Voltage VSD IS=20A,VGS=0V 1 V V ns mΩ VGS=10V, ID=10A, RL=3Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF ■ Typical Characterisitics 0 50 100 150 200 200 100 0.5 0.2 1 2 5 10 20 50 100 Ta = 25 bC Channel Dissipation Pch (W) Case Temperature Tc ( C) Power vs. Temperature Derating Drain to Source Voltage V (V)DS Drain Current I (A)D Maximum Safe Operation Area Operation in this area is limited by RDS(on) 100 ∝s1 msPW = 10 ms (1shot) DC Operation (Tc = 25ϒ b N-Channel MOSFET 2SK2869-ZJ

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics 0 1 2 3 4 50 2 4 6 8 10 Tc = 75 C 25 C –25 C Drain to Source Voltage V (V)DS Drain Current I (A)D Typical Output Characteristics Gate to Source Voltage V (V)GS Drain Current I (A)D Typical Transfer Characteristics V = 10 V Pulse Test DS 3.5 V 4 V 5 V V = 3 VGS 6 V 4.5 V 10 V Pulse Test 0.1 1 100.2 5 0.5 0.02 0.05 0.01 0.10 0.08 0.06 0.04 0.02 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 0.5 20.5 1.0 0.8 0.6 0.4 0.2 0 4 8 12 16 20 I = 15 AD 5 A 10 A 5020 0.2 0.1 V = 4 VGS 10 V V = 4 VGS 10 V 2, 5 A 10 A 2, 5, 10 A 25 C Tc = –25 C 75 C Gate to Source Voltage V (V)GS Drain to Source Saturation Voltage vs. Gate to Source Voltage V (V)DS(on) Drain to Source Saturation Voltage Drain Current I (A)D Drain to Source On State Resistance R ( )ΩDS(on) Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (bC) R ( )DS(on) Static Drain to Source on State Resistance Ω Static Drain to Source on State Resistance vs. Temperature Drain Current I (A)D Forward Transfer Admittance |y | (S)fs Forward Transfer Admittance vs. Drain Current Pulse Test Pulse Test V = 10 V Pulse Test DS Pulse Test b b b b b b N-Channel MOSFET 2SK2869-ZJ

www.kexin.com.cn4 MOSFET ■ Typical Characterisitics 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 2000 5000 1000 100 200 500 100 8 16 24 32 40 1000 500 100 200 1000 300 100 0.1 0.3 1 3 10 30 100 di / dt = 50 A / us V = 0, Ta = 25 CGS V = 0 f = 1 MHz GS Ciss Coss Crss I = 20 AD VGS VDS V = 50 V 25 V 10 V DD V = 50 V 25 V 10 V DD t f rt d(on)t d(off)t Reverse Drain Current I (A)DR Reverse Recovery Time trr (ns) Body to Drain Diode Reverse Recovery Time Capacitance C (pF) Drain to Source Voltage V (V)DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Drain to Source Voltage V (V)DS Gate to Source Voltage V (V)GS Dynamic Input Characteristics Drain Current I (A)D Switching Time t (ns) Switching Characteristics V = 10 V, V = 30 V PW = 5 us, duty < 1 % GS DD V = 0, –5 VGS 10 V 5 V 25 50 75 100 125 150 Source to Drain Voltage V (V)SD Reverse Drain Current I (A)DR Reverse Drain Current vs. Source to Drain Voltage Pulse Test Channel Temperature Tch ( C) Repetive Avalanche Energy E (mJ)AR Maximun Avalanche Energy vs. Channel Temperature Derating I = 20 A V = 25 V duty < 0.1 % Rg > 50 AP DD Ω b b N-Channel MOSFET 2SK2869-ZJ

www.kexin.com.cn 5 MOSFET ■ Typical Characterisitics D. U. TRg I Monitor AP V Monitor DS VDD 50ΩVin 15 V I D VDS I AP V(BR)DSS L VDD E = • L • I •2 1 V V – VAR AP DSS DSS DD Avalanche WaveformAvalanche Test Circuit 0.3 0.1 0.03 0.01 10u 100u 1 m 10 m 100 m 1 10 DMP PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 4.17 C/W, Tc = 25 C θ γ θ θ D = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot Pulse Tc = 25 C Vin Monitor D.U.T. Vin 10 V R L V = 30 V DD trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 50Ω 90% 10% tf Pulse Width PW (S) Normalized Transient Thermal Impedance s (t)γ Normalized Transient Thermal Impedance vs. Pulse Width mrofevaWtiucriC tseT emiT gnihctiwS b b b N-Channel MOSFET 2SK2869-ZJ