2SK2859 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

Low On resistance. Ultrahigh-speed switching. 4V drive. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS 100 V Gate to source voltage V GSS 15 V ID 2A Idp *8 A Power dissipation P D 1.6 W Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 *P W 10 s,Duty Cycle 1% Drain current Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage V DSS ID=1mA,VGS=0 100 V Drain cut-off current I DSS VDS=100V,VGS=0 100 A Gate leakage current I GSS VGS= 12V,VDS=0 10 A Gate to source cutoff voltage V GS(off) VDS=10V,ID=1mA 1.0 2.0 V Forward transfer admittance Yfs VDS=10V,ID=2A 2.5 4 S VGS=10V,ID=2A 0.3 0.4 VGS=4V,ID=2A 0.4 0.55 Input capacitance C iss 380 pF Output capacitance C oss 80 pF Reverse transfer capacitance C rss 15 pF Turn-on delay time t on 10 ns Rise time t r 13 ns Turn-off delay time t off 70 ns Fall time tf 30 ns Diode forward voltage V SD IS=2A,VGS=0 1 1.2 V VDS=20V,VGS=0,f=1MHZ ID=2A,VGS(on)=10V,RL=25 ,VDD=50V Drain to source on-state resistance R DS(on) 1 : No Contact 2:S o u r c e 3 : No Contact 4:G a t e 5-8 : Drain