2SK2857-HF KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

www.kexin.com.cn 1 MOSF ET ■ Features

  • VDS (V) = 60V
  • ID = 4 A
  • RDS(ON) ＜ 150mΩ (VGS = 10V)
  • RDS(ON) ＜ 220mΩ (VGS = 4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 4 Pulsed Drain Current (Note.1) IDM 16 Power Dissipation PD 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10us, Duty Cycle ≤ 1% Source Internal Diode Gate Protection Diode Gate Drain
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish N-Channel MOSFET 2SK2857-HF

www.kexin.com.cn2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Cutt-off Voltage VGS(off) VDS=10V , ID=1mA 1 2 V VGS=10V, ID=2.5A 150 VGS=4V, ID=1.5A 220 Forward Transconductance gFS VDS=10V, ID=2A 1 S Input Capacitance Ciss 265 Output Capacitance Coss 125 Reverse Transfer Capacitance Crss 56 Total Gate Charge Qg 10.6 Gate to Source Charge QgS 0.7 Gate to Drain Charge Qgd 3.5 Turn-On DelayTime td(on) 8 Turn-On Rise Time tr 11 Turn-Off DelayTime td(off) 52 Turn-Off Fall Time tf 22 Body Diode Reverse Recovery Time trr 49 Body Diode Reverse Recovery Charge Qrr 26.6 nC Diode Forward Voltage VSD IS=4A,VGS=0V 0.86 V IF= 4A,VGS=0, dI/dt= 50 A/μs Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF mΩ VGS(on)=10V, VDS=25V, ID=1A,RL=25Ω,RG=10Ω RDS(On) VDS = 48 V,VGS = 10 V,ID = 4 A nC ns ■ Marking Marking NX F N-Channel MOSFET 2SK2857-HF

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics 30 15060 90 100 120 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Derating Factor - % TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 0.1 PW=1 ms 100 ms 10 ms RDS(on) Lim ited (@VGS = 10V) DCTA = 25˚C Single Pulse Mounted on Ceramic Board of 16cm x 0.7mm DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 0.4 1.2 1.6 0.8 2.0 6 V 4 V VGS = 2 V 8 V 1 2 3 0.1 0.01 75˚C TA = 125˚C VGS - Gate to Sorce Voltage - V 25˚C −25˚C VDS = 10 V TRANSFER CHARACTERISTICS ID - Drain Current - A 1 10 0.1 0.1 VDS = 10 V 25 ˚C 75 ˚C 125 ˚C ID - Drain Current - A | yfs | - Forward Transfer Admittance - S TA = −25 ˚C FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 011.0 20 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ TA = 125˚C 75˚C −25˚C 25˚C 120 160 200 240 VGS = 4 V N-Channel MOSFET 2SK2857-HF

www.kexin.com.cn4 MOSF ET ■ Typical Characterisitics DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10.1 10 20 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ TA = 125˚C 75˚C −25˚C 25˚C 120 160 200 240 VGS = 10 V 200 400 600 800 1000 2 4 6 8 10 12 14 16 RDS (on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V ID = 2.5 A 1.5 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 10 100 1000 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF VDS - Drain Source Voltage - V Ciss Coss Crss f = 1 MHz 0.1 1 10 ID - Drain Current - A td(on), tr, td(off), tf - Swwitchig Time - ns 1000 100 0.1 td(off) td(on) tf tr SWITCHING CHARACTERISTICS 0.1 VGS = 0 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Source to Drain Current - A VF(S-D) - Source to Drain Voltage - V Qg - Gate Charge - nC VDS - Drain to Source Voltage - V 80 214 6 012 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V VGS VDS ID = 4 A VDD = 12 V 30 V 48 V N-Channel MOSFET 2SK2857-HF