2SK2850

2SK2850-01 FUJI

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SPECIFICATION | DEVICE NAME : Power MOSFET . TYPE NAME 1 2SK2850-01 : : SPEC.NO. oo: -- --<--- , . Fuji Electric Co.,Ltd. This Specification is subject to change without notice.

1.Scope This specifies Fuji Power MOSFET 2SK2850-01 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.0utview TO-3P Outview See to 5/;. page : 5.Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) rasa votese New | ooo «|v eeninoue Oran cure fe | __=8 (| A] usesDrsincurent os |e if | GeieSouee voage Mee ese] vif issmimPowerDispaton Po | __as_ | w | | | [Pewraineandsoage fia | so ed) feneerwerie [wy | Seer |e | | . "1 L=14.1mH,Vec=s0V 6.Electrical Characteristics at Tc=25°C (unless otherwise specified) © Static Ratings . [beseptn [S| condos [nin [yp [me] on] Drain-Source b=imA i Fewarsvimpvin fare | me || Gate Threshold b=1mA : Zero Gate Voltage Vos=900V [razsre | [to | 500 | nA | ee eweemel,” hese fae} —P eos Gate-Source Ves==30V i Pomendes fore | | | ww || Drain-Source ID=3A i famosa farce | Low | os | 0 | ee

Symbol Conditions min. | typ. | max, ~— Unit Forward Ip=3A : Tm finn | a | ow | | Reverse Transfer f=1MHz i pF jta(on) | Vee=600V 20 | 30 | [tarom) —flo=6a 110 | 170 j ns Reverse Diode Avalanche Capability L=100yH Tch=25°C : ed ee Diode Forward l=2X lor . | Reverse Recovery i Reverse Recovery -di/dt=100A/ ys . 7.Thermal Resistance Y O247-R.NNAa

Fig.l Test Circuit L DUT. Vec=90V L=100uH Vee 40V RGS RGS=5022 1 pulse Ze Za e Zz : Fig.2 Operating waveforms . . ! 9 ———_ , Lo Ves | | ly >, : | i | | ee Los

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HSmax 1 4.9202 ay B02 | oY |. 2201 x ) a * (i u : i Tie r Val § eT = a 7 Pa name wy \\ i | cas Bean ta Lot No. Ip sk 2850 3| = 1528.2 | joie: I. if 4 . | tt Hm Pa qf 16#0.1-4 | 101 S E g 4 | rs) : 1 2,220.1 if HI fi = b % Wig eA of of of ai . | luge jose ' ob tN 545402 | | | 545202 T/L 13 PRE-SOLDES | 1 \\ 1 Tt DIMENSIONS ARE IN MILLINETESS. CONNECTION : @ GATE o oe @ DRAIN @® SOURCE Note: |. Guaranieed merk of JEDEC : TO-287 avalanche ruggedness. EIAd } SC-65 Ful Electic CouLtd ° = 1 Y 0257-R-003a

PD=f (Tc) 150; [ or a a 125 A ee ere ee a ce A a too (NS Sa SE DD aa SE NE a OC | a SE 2 a SE) a a a [eR a ec a SN A 95 (ER a A sere a A Sa83 ec F835 ec AT A iyi: 9 re ; 232° 0 50 100 150 Ppt Safe operating area He ID=f (VDS) :D=0, 01, To=25°C eek oo . Bags? a a en] Se ATs . aid ee Se eT] es | Pied == aa yt SSS ec NN TST HS a EN | 0G NYS [RG 1104s { z= «0 . Hs NEL NT NOMS I SEE 00 aaa) | SSS Po TTS iS] po | SE tt — 4 He 10? 10° 10! 10? 10° ws [Vv] Fuji Electric Co.,Ltd. 2| ~e-e Yn

Typical output characteristics |D=f (VDS) :80 4s pulse test, Tc=25°C 14 - - a el - j Ry ee RE ERE ER ES H CR Ee ER Vy 10 | rs ee ee = : Ege iT gf ee a ee pF 25. 5V_ 3 po py ee iio = el A 7 ae | es ey See ee 5, v— it oY Ze : i 2- A ee ee 4. 5V__ sore [7 i Bree AA a ee) Sbs5 [A fit Tit 4 ov ate ) CSS WV 232e 0 5 0 1 20 2 30 3 syns Ws [V) giiii Typical transfer characteristic Ht ID=# (VGS) :801s pulse test, VDS=25V, Tch=25°C EFEs? rrr Bae A zoo 85 Hui petit) | tt #Esz2 Et a" ce wellliA tt tt 2 ——— EA RR SON De | eS OS es i re eS Pree 10°! ——— a ee Se Sr neo! HPP : wo 1 2 3 4 5 6 7 8 § 10 ves [Vv] s - { Fuji Electric Co.,Ltd. | oo. VA — i

i Typical forward transconductance gfs=f (ID) :80us pulse test, VDS=25V, Tch=25°C 10° ES Le ON OC RS SN ES OSS | [ee [oT ee ty i Er 100 ee NE OE ES ST OS RO OS EE S| A a eS OS NS an 8 OOO GO 8 a 2H oy gt 10° 10! Ssii2 23338 1D [A] ii Typical drain-source on-state resistance 2ehes ROS (on)=f (ID) :80s pulse test, Tc=25°C 2f33) ——— ro 7 eee a | aoaiy a A | Bese 6 Co ae zesit | eoeze GS= a ear Peas 4. Ov4. V8. OV} 8. Vf A A | : 5 a SO ce Se | Se 6 eo . & a a Oy & a a So a A | [oo = ———— oop a aa SE ca 0 5 10 15 (D [A] Fuji Electric Co.,Ltd. 2| wy EY

Drain-source on-state resistance

3 Ros (on) =f (Tch) : |D=3A, VGS=10V

aE Ee | a a Pag Oe [ET a (a eae (a ere g fe. Petree ir gg Pe TTT tml TT eg Tee ; 2 fT Trier trey of er be tility] [Peet Peet Trt rai tT sure ; ewe TT ae sites -50 0 50 100 «150 SESS aid Teh [°C] ii Gate threshold voltage re V@S (th) =f (Toh) : ID=1mA, VDS=VGS ; Se Ee stot 20 ree Ss fOr Ste. = A SD s ee ore ee i eee 8 of 2 ey Sk A a a tof ed a | (eo [er ele a oo “ -50 0 50 100 150 Tch [°C] s 9 { i} Co.,L ¢ Ip a

Typical gate charge characteristic . VGS=f (Qg) : ID=6A, Tc=25°C 800 — T pj 40 eh NT NE OC OE CO

70 Co oy 35

a A RS OIE EO CE EE. CB

600 Co ey 30

• EEE AEE 450V < > Se Se EY A Ss Rar) he ee ES EY 77 Ae a 2 00 cote oe 20 =) 9

300 Koo eer 15

, a a 74 A a SS SSS A 1B0vV eZ 200 eo 10 ee eS 0G AM RE EO DO 2Ei 10 bcp ee 8 S335 A A Soke PCE Ol ee £333 A, SC A OO A a3: C77 = 2328 0 0 282 ta 0 20 40 60 80 100 120 140 160 180 32i3d Qg [nC] . Hill Typical capacitances gitse C=f (VDS) : VGS=OV, f=1MHz geile a SO OEE ET Sl Segre eee | — (OEE a —— TE TT MN A DS OE SO g Re © en NSE rs Ee ee og ee ||| AS ——— Ors} eee TUrss: eee eee aa EEA | | Se | ee iE 107 10" 10° 10' 10? vos [Vv] a F 3; oy to Fuji Electric Co.,Ltd. g a unaaana-n?

Forward characteristic of reverse of diode ott (VSD) :80 4s pules test, VGS=0V : ———— a ee eee po eee ee ee ed ed A 2 <a e ecee l acee t eee eee eee PA Tete 28°C tye. ee <r ee ee ee Ea SSS NN SO CR OO A PR EE | eS I ES OY | re ee ee ee 107! LT Suri ae ce oe oc oc | yl a NO A | dileg 0.0 02 04 086 O8 10 12 «1.4 52326 2yRe vsd [VJ i833 Transient thermal impedande Hedi 10! Zthch=f (t) parameter :D=t/T FEERA — oe : a Pe ed | ——— s ea ee ee ee é ect EE | {Pie A ee eT EEO od Fao 0. 02 = fod oy EL | 7 Tir. a aa | ie 10% 10 10° 10 10"! 10° 10! t (s] - . s| +s 1

300 Eas=f (starting Tch) :Voc=90V, | 4=6A

2s [No A CO OE SC PT aD ee : Pe eT _—<_ ee

3 Se ee

= SRS SE o pees |) fi ae OE A GS | RN SS ES SO EE too (I Pee eee |) Oe ET Sa OA SN OY A (SO aa nO NNN DE A (

59 JN ee

po Se} SEER [TN eee SERGE RD ON EO geo. [eS 3 33 9 Cee) arti 0 50 100 150 # Hy Starting Tch [°C] Fgiis deisd] beset #3Til Fuji Electric Co.,Ltd. A =