2SK2834-01 FUJI
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DEVICE NAME : Power MOSFET TYPE NAME : 2SK2834-01 BEER z83s SPEC. No. i Bees 2etas eit 22385 S825 ESEEE B82 Fuji Electric Co.,Ltd. Matsumoto Factory This Specification is subject to change without notice. DATE JAME . . a — Fell Becirk: Colic Cc) a g yo fo S tL | z fe H04-004-07
- Scope This specifies Fuji power MOSFET 2SK2834-01 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview TO-3P Outview See to5/j2 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) Description | Symbol | Characteristics | Unit | | i 1 | Drain-source voltage | Vos | 600 Vv : Continuous Drain current lo + 9 A | | Pulsed drain current | pours | + 32 A : ! Repetitive or non-repetitive [ie [| 9 | Vv Tch $150 °C i BEER Avalanche energy Eas | 162.3 mJ | See page 12/12% ! 2B3e Bugis Maximum power dissipation Po | 80 Ww ' 232s : epeae Operating and storage Ten 150 | e,feg 22250 PeEis temperature range -55 ~ +150 xe] Eais: 3 L=3.67mH . Vec=60V 25838 6. Electrical characteristics at Tc=25°C (unless otherwise specified) ages Static ratings Beg Eseie Description Symbol Conditions Unit Pa [oe [me | Drain-source fo =1mA breakdown voltage | BVoss | Ves=0V Vv Gate threshold lo =1mA voltage | Ves(th) | Vos=Ves 3.5 4.0 4.5 Vv Zero gate voltage | tor | Vos=600V | Ten= 25°C | | 10 500 uA | drain current Ves= OV Gate-source Vos=+35V leakage current Vos= OV nA Drain-source on- lo =4.5A state resistance | Ros(on)| Vos= 10V 1.2 Q g _] Fuji Electric Co.Ltd. g In FR H04-004-03
Description Symbo! Condit ions Unit ie [te [oe | || Forward lo =4.5A transconductance gfs Vos= 25V 2.5 Ss Vos=25V f =1MHz Reverse transfer capacitance Crss 70 110 pF t d(on) 40 ns | Turn-on time Vco=300V Ves= 10V | | | 10 | ns lo = 9A td(off) | Res= 100 ; | | 90 | ns | Turn-off time i gsss guise Reverse diode eae ts Description Symbol Conditions Unit £2385 EBs: Avalanche L=3.67mH, Ten =25°C fess capability lav *See Fig. and 2 A fuses ag35? Diode forward 1, =2X lor E2832 on-vol tage Vso Voes=0V, Ten=25C 1.5 Vv Eseiez Reverse recovery Je =lor time tee Vos=0V ~dle/dt=100A/us Reverse recovery Ten =25 charge 7.0 uC T. Thermal resistance Description Symbo! Conditions Unit | Ge fie fee | ep fe Thermal resistance ee g Fuji Electric Co,Ltd. 3 Ya H04-004-03
Fig.1 Test circuit L : k— D.ULT = Vee (7) 0Q Vec=1/10 * Vos L= 367mH 1 pulse T77 TIT I77 T77 Fig.2 Operating waveforms 0 ee Ves ON Yes 0 lo 2 ES Fuji Electric Co,Ltd. g hy Y 0257-R-003a
FUJI] POWER MOS FET TYPE + 2SK2634-01P y 1320.2 45" 240.1 Vv =] s Trade eral fr (oR mark > { ~ We Type 9 g name =, wy 2 | Lot_No. S} FEss See Note:2. Seis 7 To WwW mW oo yy fez Mm ia tA mM A 2425 ef wu Ho OH Aco: ee ee H HE i238 a i) ra Bh oe bri Q| | @ ret] ! | 138 05? | ree 283 5.4520.2 5.4540.2 | [15 PRE-SOLDER pee 22222 - DIMENSIONS ARE IN MILLIMETERS. CONNECTION GATE ®@0 © @ DRAIN @ SOURCE Note:1. Country, of origin mark, No mark is Made in JAPAN JEDEC : TO-247. TPii PJ is Made in PHILIPPINES, EIAJ : SC-65 2. Guaranteed mark of avalanche ruggedness. é a HO04~004-03
PD=f(Tc) 0 a 5 Oe ee 80 NO eS a 80 TN = NT = a ae SS oN a a Fr Po Ke 222 0 50 100 150 Ae Safe operating area — Hine 1D=f(WDS):D=0. 01, Te=25°C SPEse oS et 1 [ee SEge8 [es Si | SS To Fe SOs cet NTIS SET Ci = 100 o = a Un SSeS = LHe CENA 10 eS 1 00s
4 Es RE | a Te |
re eRe po) ge [Ti AL ed oe TI Tn TTY 1 10° 10! 102 103 vos [V]
Typical output characteristics
0 ID=f (VDS) :80us pulse test, Tc=25°C
0 Ceti tepei de pete bel Joie bY
0 5 100 15 —iH (8s vos [V] Typical transfer characteristic |D=f (VGS) :80us pulse test, VDS=25V, Tch=25°C = 10° == = ee isan = fe = : ; = a | 0 1 2 3 4 5 6 7 8 9 10 ves [V] Fuji Electric Co.,Ltd. Fl Vp + : Y 0257-R-003e
Typical forward transconductance gfs=f (ID) :80us pulse test, VDS=25V, Tch=25°C 10° Seai= ioe Send eer yg 10° 10! 1D [A] Typical drain-source on-state resistance 0reS (on)=f (ID) :804s pulse test, Tc=25°C oe) Fa ees eee B 4 Het | — ssennaes [: =a eee t ey ct mee a BV Eye ; ea pines = er ON 0 5 10 5 20 ID TA rT Y 0257-R-003a
Drain-source on-state resistance 40 RDS (on) =f (Tch) : ID=4.SAVGS=10V = 20 HEE = aX. iy om [Leet Vp. woe *8 Peep es eases -50 0 50 100 150 Teh [°C] Gate-threshold voltage
60 VGS (th) =f (Tch) : 1|D=1mA, VDS=V6S
"50 0 50 100 150 Teh [°C] Fuji Electric Co.,Ltd. F Va Y 0257-R-003a
Typical gate charge characteristic VGS=f (Qg) : ID=9A, Tc=25°C
500 Ge eo 50
FnVec=480V— Eee
450 FREER eee
400 FREESE EEE eee 40
380 FREER ERS eee An
4 300 Gee eee m7 30 «< > ee ot 3 2 750 GSES S a 7 4 s TO SPREE Reape ee
200 EEE ee 20
5 Sian ou 97
100 SRE pee 10
oe [eee 0 20 = 40 60 80 100 120 140 Qg [nC] Typical capacitances . C=f (VDS) : VGS=0V, f=1MHz "On eee rae es eee er eer erst mee es emer ee ee DP Pe bcp 8) INE Coss "02 10"! 10° 10! 102 vps [V] Fuji Electric Co.,Ltd 2 A= J Ltd. g % ct Y 0257-R-003a
Forward characteristic of reverse of diode IF=f (VSD) :80us pules test, VGS=0V PE ey 1072 — - ! : Passe 00 #02 04 O86 O8 10 12 «21.4 iis iv Transient thermal impedance ege8i 10 Zthch=t(t) parameter :D=t/T gazgii EL) ES eS ) | COI OE eer > A | el ? Loli a as To $B | pe EO 2 ae NC <= pee ee] Pen a] em 10° 107 10° 107 wo ale 10! t [s] a Fuji Electric Co.,Ltd. ;| Yo H04-004-03
200 Eas=f(starting Tch):Vcc=60V, | y=9A
A fond & 100 ; 3 A Ww PN a Fy ee CO | PN a 2u2f 0 50 100 150 aiifg Starting Teh [°C] 3 i Fuji Electric Co.,Ltd. Al hy EA HN4-N4-02.