2SK2833-R FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 10
Technical content
DEVICE NAME : Power MOSFET TYPE NAME : 2SK2833-R 2Be8 SPEC. No, : Pere S32is £Bes8 SEesg fe2es 23358 g2ist EIESE 3Se3? EBEE2 Fuji Electric Co.,Ltd. Matsumoto Factory This Specification is subject to change without notice. faa] APPRO Fuji Electric Co,ltd. — i] wan H04-004-07
- Scope This specifies Fuji power MOSFET 2SK2833-R 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview T0-3PF Outview See to 4/10 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) Description Symbol | Characteristics | Unit | | Drain-source voltage Vos | 120 Vv | Drain-gate voltage Vocr | 120 | Vv Res=20kKQ | Continuous Drain current lo + 50 A | | Pulsed drain current | peuine + 200 A | Gate-source voltage Ves + 20 Vv | SEES j Maximum power dissipation | Po 100 | W | bytes Operating and storage Ten 150 c i ES ae temperature range Tats -55 ~ +150 2e835 B8555 6. Electrical characteristics at Tc=25°C (unless otherwise specified) 5:2] Static ratings ages Description Symbol! Conditions Unit eee isgiz Drain-source lo =1mA breakdown voltage | BVoss | Vos=0V 120 Vv Gate threshold to =1mA voltage | Ves(th) | Vos=Ves 1.0 1.5 2.5 Vv drain current Ves= OV [to | T en=125°C 0.2] 1.0] mA Gate-source Ves=+20V | leakage current loss Vos= OW 100 ; nA state resistance | Ros(on)| |o =25A 2 gy too Fuji Electric Co.Ltd. Fa Yo | H04-004-03
Dynamic’ ratings Characteristics j Description Symbo! Condi tions ; Unit Forward I> = 25A | transconductance gfs Vos= 25V 25 50 ; § Vos=25V 7 1 f = =1MHz Reverse transfer | | i capacitance Crss 500 750 | pF: t don) 30; 45 | ns Turn-on time Vec= 60V i | tr | Ves= 10V | 200 | 300] ns | 1o = 50A ' : td(off) | Res= 250 950 | 1425 | ons Turn-off time tf | 400 | 600 | ns betas Reverse diode zB7sé was j Bee éy Characteristics | : S3isé Description Symbol Conditions 1 Unit iiits Min. | Typ. | Max. | £2525 + \\ gaese Diode forward lp =2X lor EEES8 on-vol tage Vso Ves=0V, Ten=25°C 1.33 2.0 Vv S5eR8 Bt 23 Reverse recovery le =Tor 32823 time ter Vas=0V ns gece -dle/dt=100A/us Z35z2 Reverse recovery Ten=25°C charge Pa ue T. Thermal resistance Characteristics | i Description Symbol! Conditions Unit | Pim [oe [we Thermal! resistance g Fuji Electric Co.Ltd. g Yo Io H04-004-03
Ou u 1 1 3.2% SG : ee es T T eae at & Hi | “tl U5 | | or - i Tredemerk [ S +s ey Type name | =a ~ nw S See Note 1. | ee 3 nu sea TFS 3 Nv See Note 2. bo 4 a tac \\ 1 BREs Lot No. 7 7 TA geese 4 i 4 1620.3 | ees Hal OB at e Ml 2203 8 Pgees en | S geese i iy ss nw 23323 ti 1 | Pent: HY 4 HH gaee8 ty es Hy SFisé is i H Pre-Solder geek. H H ' fee2eo oar TT FgRES 5.4520.2 ‘| 5.4520.2 | | 3sa02 a re rs as ir rr i 1 1 oo om mM [=F] [ee] [P| Oo ® © CONNECTION Note 1. Guaranteed mark of avalanche ruggedness. @) GATE 2. Vesun selected code. @ DRAIN @ source DIMENSIONS ARE IN MILLIMETERS. s | Ful lectre Covi H04-004-03
PD=f(Te) 100 QL nT 0 >— TES oe = 9 & I j TN a || i | Hl a a a 2325 0 50 100 150 ainid Safe operating area ~ fips ID=(VDS):D=0. 01, Tc=25°C Susie _ | 23222 102 — il’ =! xp ts root as { So as: ae YET dus TO TEE nse 1 bhi oN T10ms itiae pO oe 100mg Si = io! 10° 10! 10? 103 ws [V]
Typical output characteristics ID=f(VDS):804s pulse test, Tch=25°C 2ev av E uy: : : : 4 uit : : i 3 fb wy: : : : 1 Sot We - : : av a / : : : ' 5 j : : : : 1! r : : : : 4 3 : : : : dv 6 2 4 6 A 40 YDS (Vi Typical Transfer Characterisic ]D=f(VGS):80us pulse test, VDS=25V Vos MI os . < Lt Fuji Electric Co_Lid. g % Eq il Y 0257-R-003a
gis=f{(ID):80ys pulse test, VDS=25V, Tch=25'°C B abc locccset CT eeedieeneeed i : : : : i : : : : 4 a 28 45 6B $8 188 Dw Typical Drain-source on-state resistance RDS (on)=£(1D):80us pulse test, Tch=25'C rng s : i 5 : E : : : : q E : : : : : : : ly eee TT @ 20 4B By ae 108 De $ tot Y 0257-R-003a
Drain-source on-state resistanse . RDS (on)=f (Tch) : ID=25A, VGS=10V 100 pee s . - E : : I | & : : : c : i :
3 L :
E - : : E : : : i E : : : 3 -58 58 188 158 Teh (Tl Gate threshold voltage VGS (th)=f (Ich) : VDS=VGS, ID=1mA zt : : : 1 Ps L : : : ] Ss t > : : 4 ~58 8 5@ 100 15@ Teh (Cl) . g 4 Fuji Electric Co,Ltd. g % ++ Y 0257-R-003a
Typical gate charge characteristics VGS=f (Qg) : ID=50A 128 : 34 12 : : : : ail : : : I an 100 gy cree eee ete tenet fh / Misees 40 : : ; : : 3 E : 5 : : : q @ 58 180 150 208 258 308 Og inch Typical capacitances C=f (VDS) : VGS=OV, f=1MHz E : : : Crss r) 18 20 30 48 YDS (VI ¢ av IG Fuji Electric Co.Ltd. 3 Yo HE Ss i Y 0257-R-003a
Forward characteristic of reverse of diode 1 cf QS0):80 us pules test, VGS=0V a Poe ese Weed _ ES | ee eee oe) ee a a & ec or) a oo Ee eee ew ommd [oT ye Bere | Sie 4 i Hu Transient thermal impedande betes] ' Zthch= f(t) parameter :D=t/T ae Poi yp ey it Co SS > a _ a S19 0. 05_! ol AA | Like Hite pid 1 pre 10> 104 10° 10? 10"! 10° 10! t (s] g 1