2SK2806-01_05 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Item Symbol Rating Unit Remarks Drain-source voltage V DS 30 Continuous drain current I D ±35 Pulsed drain current I D[puls] ±140 Gate-source peak voltage V GS ±16 Maximum avalanche energy E AV 129.3 Maximum power dissipation P D 30 Operating and storage T ch +150 temperature range T stg 2SK2806-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) V A A V mJ W °C-55 to +150 FAP-IIIB SERIES Electrical characteristics (Tc =25°C unless otherwise specified) Thermal characteristics Item Symbol Zero gate voltage drain current IDSS Min. Typ. Max. Units V V µA mA nA mΩ mΩ S pF ns A V ns µC Min. Typ. Max. Units Thermal resistance Rth(ch-c) Rth(ch-a) 4.16 75.0 °C/W °C/W Symbol V (BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V VGS=0V Tch=25°C Tch=125°C VGS=±16V VDS=0V ID=17.5A VGS=10V ID=17.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V RG=10 Ω ID=35A VGS=10V L=100µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=2xIDR VGS=0V -di/dt=100A/µs Tch=25°C 1.0 1.5 2.0 10 500 0.2 1.0 10 100 22 30 14 20 16 33 1100 1650 550 830 240 360 91 5 15 23 75 115 50 75 0.98 1.71 0.08 Gate(G) Source(S) Drain(D) Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof
Applications
General purpose power amplifier www.fujielectric.co.jp/fdt/scd *1 L=0.70mH, Vcc=12V Item Drain-source breakdown voltage Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge TO-220AB VGS=4V VGS=10V 200509
2SK2806-01FUJI POWER MOSFET
FUJI POWER MOSFET 2SK2806-01
2SK2806-01FUJI POWER MOSFET