2SK2771-01R FUJI
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Technical content
DEVICE NAME i Power MOSFET TYPE NAME : 2SK27T7T1-01R SPEC. No. : . Fuji Electric Co,Ltd This Specification is subject to change without notice. uji Electric Coltd a Vi, a a ee H WER Y 025T-R-004a
- Scope This specifies Fuji power MOSFET 2SK2771-01R . 2. Construction N-channel! enhancement mode power MOSFET 3. Application for switching : 4. Qutview TO-3PF Qutview See to 5/11 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) raise wie [ve | |v [| sinner destin [Pe | wef wf 6. Electrical characteristics | at Tc=25°C (unless otherwise specified) Static ratings . Characteristics Description Symbo| Conditions Unit Pin [te [me | Drain-source lo =1mA breakdown voltage | BVoss | Ves=0V Vv Gate threshold lo =1mA voltage | Ves(th) | Vos=Ves 2.5 3.0 3.5 Vv Zero ate wotase | Torn | Vee=00[ Tox |__| | sm | aa | drain current Ves= OVE- > Gate-source Ves=+30V leakage current Vos= OV 10 nA Drain-source on- lo =4.5A : state resistance | Ros(on) | Ves=10 V 1 1.4 Q g x 4 Fuji Electric Co,Ltd. g 11 : Y 0257-R-003a
Dynamic ratings : Description Symbol Conditions Unit “see Tin [am [me Forward [> =4.5A transconductance gfs Vos=25 V 5 10 Ss Vos=25V f =1MHz Reverse transfer capacitance Crss pF [sel | Turn-on time Vec=600V cc lo = 9A Turn-off time [Te Diep | _ Reverse diode . Description Symbol Conditions Avalanche L= 1004H, Ten= 25°C capability lay + see Figl and Fig2 A Diode forward le =2X lor on-vo|l tage Vso Ves=0V, Ten= 25 1.2 Vv Reverse recovery le =lor time tere Vos=0V 450 ns -dle/dt=100A/ps Reverse recovery © Ten=25C charge 4 uC T. Thermal resistance Description Symbol Conditions Unit rd Thermal resistance fawep PP [ Fuji Electric Co,Ltd. g 1 Y 0257-R-003a
Fig.! Test circuit “ L | < DUT = Vee
500 Vec=1/10 § Vos
L= 100nH 1 pulse Fig.2 Operating waveforms 0 ee ae Ves lay ——— DN Vos 0 lo 3 4/7 FE Fuji Electric Co,Ltd. 3 WE . Y 0257-R-003a
FUJI POWER MOSFET | TYPE = 2SK2771-O1R 3 15.520.3 3 S#0. $2605 — in 328 be che oO ran § = 2 Type name | fS wl 3 See Note ] | Ske7 71 4 a Lot No. a) Y ie 0 tH . Hil Fl 16x03 Hil | ee iy &§ ss ss 4 : i 6; 1] i bi t Pre-Solder H GO | 1.188 0.68 om om mo l=] [er] [| ®G®G O@ @O : CONNECTION Note 1. Guaranteed mark of avalanche ruggedness. @ GATE : @ DRAIN ® source DIMENSIONS ARE IN MILLIMETERS. g CI Y 0257-R-003a
PD=f (Tc) 100 eee — 9s Po ee 2 ee Oe ee 25 one ) Ce tect ee . 0 50 100 150 Te [°C] Safe operating area ID=f (VDS) :D=0. 01, Tc=25°C MURS TSR PESSS Sse Sco Sli GMail GAA (GaGa PTTGbpT oc Pv CA SS itso. 0tus Ss jrvtomnoniuinttmmuninn Sgt efannagndet ches btm] Q Ug jt eee Se 10 io! 10? 10 Vos [V] > Ci .. . Y 0257-R-003a
Typical output characteristics ID=f(VDS):804s pulse test, Tch=25°C : : eT a Sy a a : : ; BF Sh fel dye 9 5 4a 15 20 23 , vis )) Typical Transfer Characteristics : ID=f(VGS):804s pulse test, VDS=25V, Tch=25°C 42 | Q : A : : 9 2 4 6 8 10 ves ; : Fuji Electric Co.Ltd. fo 7 i, = , Y 0257-R-003a
gfs=f(ID):80us pulse test, VDS=25V, Tch=25'c 20 - — : b : : : : 4 : : : : i} 3 6 3 12 15 ‘ DA Typical Drain-source on-state resistance RDS(on)=f(1D):80us pulse test, Tch=25'C v 4:5V 5 ov : i : 5, sy Sysevzey 8 : : : 0 5 18 45 20 DA Fuji Electric Co,Ltd. gy A= Y 0257-R-003a
Drain-source on-state resistance RDS (on)=f (Tch) : 1D=4, 5A, VGS=10V | : - . Q . : : -50 8 58 100 150 Teh ('C) Gate threshold voltage VGS (th) =f (Tch) : VDS=VGS, ID=1mA ae = . “Thee : tup. 4 : : : -50 i) 58 100 150 Teh ('C) Fuji Electric Co,Ltd. EMH a Y 0257-R-003a
Typical gate charge characteristics VGS=f (Og) : ID=9A 1000 : ‘ . rq 25 P2av : : sagytsev . . 28 8 : : S 1) WW Q 8 50 100 150 . Qg (rc) Typical capacitances C=f(VDS) : VGS=OV, f=1MHz & : : : 49° : aod : . 0 10 20 3 40 Vos) IT 0. = tf Ee ; Y 0257-R-003a
Farward characteristic of revese diode . IF=f(VSD):80zs pulse test 107. Tro To a a Q a5 Lo is 20 . \\sD MW . Transient thermal impedande 10! pereee StNChET(t) parameter :D=t/T ey eT oa re CE ee lL AI ETE i105 jo-4 lo? jo? 107! 10° to! t [s] Fuji Electric Co,Ltd. 3 W/E Y 0257-R-003a