2SK2767-01_1 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
Applications
UPS (Uninterruptible Power Supply) DC-DC converters
2SK2767-01 FUJI POWER MOSFET 0 50 100 150 100 Power Dissipation PD=f(Tc) PD [W] Tc [ o 310 1 t=0.01µs Safe operating area DC 100ms 10ms 1ms 100µs VDS [V] ID [A] 1µs 10µs t TD= t T 0123456789 1 010 Typical transfer characteristic ID [A] VGS [V] 110 Typical forward transconductance gfs [s] ID [A] ID=f(VDS):D=0.01,Tc=25°C ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C
2SK2767-01 FUJI POWER MOSFET -50 0 50 100 150 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=2A,VGS=10V RDS(on) [ Ω ] Tch [ o -50 0 50 100 1500.0 1.0 2.0 3.0 4.0 5.0 6.0 min. typ. max. Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS VGS(th) [V] Tch [ o 0 1 02 03 04 05 06 07 08 0 100 200 300 400 500 600 700 800 Vcc=180V 450V 720V 180V 450V Vcc=720V VGS [V] VDS [V] Typical gate charge characteristic Qg [nC] 210p 100p 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz C [F] VDS [V] Ciss Coss Crss Tch=25 o C typ. Forward characteristic of reverse of diode IF [A] VSD [V] 0 50 100 150 100 150 200 250 300 Avalanche energy derating Eas [mJ] Starting Tch [ o VGS=f(Qg):ID=3.5A,Tch=25°C IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=90V,I AV=3.5A
2SK2767-01 FUJI POWER MOSFET D=0.5 0.2 0.02 0.05 0.1 0.01 Transient thermal impedance Zthch=f(t) parameter:D=t/T Zthch-c [K/W] t [s] t TD= t T