2SK2762-01L FUJI
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DEVICE NAME : Power MOSFET TYPE_NAME : 2SK27T62-01L, S$ SPEC. No. A Fuji Electric Co,Ltd This Specification is subject to change without notice. [| pate | NAME [approveo Fuji Electric Co.Lid CHEERED, vy. ES | 2 (3 Y 0257-R-004a
- Scope This specifies Fuji power MOSFET 2SK2762-01L, S 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview T-pack L-type See to 5/13 page S-type See to 6/13 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) airsare wine [ve | [vf [ses wie [ve | #@ vp 3 = L=29. tmH, Vec=80V 6. Electrical characteristics at Tc=25°C (unless otherwise specified) Static ratings Description Symbo!| Conditions Unit re [oe | me | Drain-source }o =1mA breakdown voltage | BVoss | Ves=0V 800 Vv Gate threshold I> =1mA voltage | Ves(th) | Vos=Ves Vv Zero gate voltage | loss | Vos=800V| Ter 2c] | 10 | 500 | aA | drain current Ves= OW Gate~source Ves=+30V leakage current Vos= OW Drain-source on- lp =2A state resistance | Ros(on) | Ves=10 V 4,00 27 4 FujiElecwic Contd Hf) Ho Y 0257-R-003a
Description Symbol! Condi tions Unit ee [om [oe | Forward lo =2A transconductance gfs Vos=25 V Ss Pf | | Vos=25V “f = 1MHz Reverse transfer capaci tance Crss 40 pF eat | Turn-on time Voc=600V I> = 4A Turn-off time | | 2] | Reverse diode Description Symbol Condit ions Unit Pain [om [me | Avalanche L=1004H, Ten=25°C capability * See Figl and 2 A Diode forward le =2X Tor on-vol tage Vso Vos=0V, Ten=25°C Vv Reverse recovery le =lor time tre Voes=0V 700 -dle/dt=100A/us Reverse recovery Ten =25C charge ue T. Thermal resistance Description Symbol Conditions [win | tm | tox_| Ce I) Thermal resistance Ee CZ) 3/. ES Fuji Electric Co,Ltd. 43 FS Y 0257-R-003a
Fig.1 Test circuit L > D.U.T = Vee 0Q Vec=1/10 # Vos L= 100«H 1 pulse Fig.2 Operating waveforms
0 J LL Ves
lav ——;} TN. Vos 0 lo 4y. ee Fuji Electric Co,Ltd. A is FI Y 0257-R-003a
TYPE : 2SK2762-01L +05 10°? im 4540.2 fe} Lot No. a 1,340.2 Trademark rms = 0301 g See Note: 1. —Aei6e S Type name TT ae i £ i te NIE 1.240.214 i 9/4 a | le 4 ty . Hae” : A 4 Hy PRE-SOLDER olale | 0.8 *8F 0420.2 i 1 i) CONNECTION oho pore @ GATE @ SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. Y 0257-R-003a
108° 2 j 4. 540.2% Note = 1 & 132% Trade = | @|° mar —— SI o H fo} Lot No. LS £301 |. 2 27 9 Type P762 & z name ; | 4 2 m | Li =| ai | lol tet O'®@ 1° or a BOTTOM VIEW
405 CONNECTION
10°0° ee (7.5) @M GATE Bizz by 7) ®@®@ DRAIN ZB VY VLA Y Yj; @ SOURCE Ol a ol Vlas | PRE SOLDER WO 4 v4 w if Notes | | 1. (.) + REFERENCE DIMENSIONS. Note 1. Guaranteed mark of 9. *:DO NOT INCLUDE SOLDER avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. Y 0257-R-003a
PD=f (Tc)
60 Sas EES
ok =p =i == Sat aiaeos = = Te [°C] Safe operating area — 1D=f (VDS) :D=0. 01, Tc=25°C eee fe Ny FEO. OT US. eed En NE UH Sang fednes i 1.100 ps... “1 ~ | Nh 100ms. 10° 10! 10? 10? vDS [V] vy ES Y 0257-R-003a
: Typical output characteristics : ID=f (VDS) :80 us pulse test, Tc=25°C Ov » Fea BV 0 5 10 15 20 2 30 35 vos [VJ Typical transfer characteristic . |D=f (VGS) :80 us pulse test, VDS=25V, Tch=25°C o 1 2 38 4 5 6 7 8 9 10 vas [V] — 87 HE Y 0257-R-003a
Typical forward transconductance gfs=f (ID) :80us pulse test, VDS=25V, Tch=25°C Wg 10° 10! 1D [A] Typical drain-source on-state resistance ag DS (on)=f (1D) :80us pulse test, To=25°C lo | coef pepe pepe reee BV rove 0 1 2 3 4 5 6 7 8 1D [A] Y 0257-R-003a
Drain-source on-state resistance » RDS (on) =f (Teh) : 1D=2A, VGS=10V gr ax, -50 0 50 100 150 Teh [°C] Gate threshold voltage -
50 VGS (th) =f (Tch) : ID=1mA, VDS=VGS
0.050 o 50 100 “750 Tch [°C] a Y 0257-R-003a
. Typical gate charge characteristic VGS=f (Qg) : ID=4A, Tc=25°C 800 ee“ CoOCCO ee CoO eee COCO ee
700 PCOS 35
VeeredOv HE rr HE Pre TES Sect CREE RS coo Pee ON eT
600 AO too 30
BUM RS eee ee 4p 4) Ae COCO
500 Coe eee 25
_ . COO ia ee < > COO aia ie @
400 AFR °
900 A eee ee |
200 ,60V AEA Pe 0 SR NEAAGABE9 494) 4EERRRRERR ORE ee eee Cee eee CONC Too FP STEEP reer eee © HCA eee eee] POON ee]
0 OT SSS EE 0
Qg [nC] Typical capacitances - C=f (VDS) : V@S=OV, f=1MHz eee top 107 107 10° 10! 10? vOS [V] - 1 Fuji ic Co.,Ltd. Wy AS ji Electric Co.,Ltd A V3 _ Y 0257-R-003a
- Forward characteristic of reverse of diode IF=f (VSD) :80us pules test, VGS=0V 10! inde Saas see jon tot annne al L__ at 1. _ 00 #02 04 06 O8 10 12 «214 VSD [V] Transient thermal impedance 40! Zthch=f (t) parameter :D=t/T 10? [=0, Sieorttef rors mtg eee Se pee fet es fit 10 104 10° 107 107 10? 10' t [s] Y 0257-R-003a
~ Avalanche energy derating
300 Eas=f (starting Tch) :Vec=80V, | ,y=4A
Zo : a 100 = ae — = — ar 50 100 150 Starting Tch [°C] 13 rT i) WA 3 FR Y 0257-R-003a
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