2SK2751 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Silicon Junction FETs (Small Signal) unit: mm 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor n Features l Low noise-figure (NF) l High gate to drain voltage VGDO l Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. n Electrical Characteristics (Ta = 25 ± 3°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Symbol IDSS IGSS V GDS V GSC | Yfs | C iss C oss C rss Conditions V DS = 10V, VGS = 0 V GS = -20V, VDS = 0 IG = -100mA, VDS = 0 V DS = 10V, ID = 1mA V DS = 10V, ID = 1mA, f = 1kHz V DS = 10V, VGS = 0, f = 1MHz min 1.4 -40 2.5 max 4.7 -3.5 Unit mA nA V V mS pF pF pF Note: The test method to comply with JISC7030, Field effect transistor test method. typ 1: Source JEDEC: TO-236 2: Drain EIAJ: SC-59 3: Gate Mini Type Package (3-pin) Marking Symbol: HS 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9±0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4±0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 n Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol V GDS ID IG PD Tch Tstg Ratings -40 200 150 -55 to +150 Unit V mA mA mW

Silicon Junction FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VGS | Yfs | ¾ VGS | Yfs | ¾ ID 2SK2751 250 200 150 100 0 160 40 120 80 14020 100 60 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 2 10826 4 Ta=25˚C VGS =0.6V 0.4V 0.2V – 0.2V Drain to source voltage VDS (V) Drain current ID (mA ) VDS =10V Ta=–25˚C 25˚C 75˚C Gate to source voltage VGS (V) Drain current ID (mA ) VDS =10V Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 06 5413 2 VDS =25V TC =25˚C Drain current ID (mA ) Forward transfer admittance |Yfs| (mS )