2SK2751_07 UTC

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UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET www.unisonic.com.tw 1 of 4 Copyright © 2007 Unisonic Technologies Co., Ltd QW-R206-087.C N-CHANNEL JUNCTION FET „ FEATURES * Low noise-figure (NF). * High gate to drain voltage VGDO. „ APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 2SK2751-AE3-R 2SK2751L-AE3-R SOT-23 D S G Tape Reel 2SK2751-AL3-R 2SK2751L-AL3-R SOT-323 D S G Tape Reel „ MARKING

UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 0 6 - 0 6 7 . C „ ABSOLUTE MAXIMUM RATINGS (Ta = 25Ċ) PARAMETER SYMBOL RATINGS UNIT Gate-Drain Voltage V GDS -40 V Drain Current I D 10 mA Gate Current I G 2 mA Allowable Power Dissipation P D 200 mW Channel Temperature T CH +150 Ċ Storage Temperature T STG -55 ~ +150 Ċ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (Ta=25±3Ċ, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate-Drain Voltage V GDS I G=-100µA, VDS=0 -40 V Gate-Source Cut-Off Voltage V GSC V DS=10V, ID=1µA -3.5 V Drain-Source Cut-Off Current I DSS V DS=10V, VGS=0 1.4 4.7 mA Gate-Source Leakage Current I GSS V GS=-20V, VDS=0 -1 nA Forward Transfer Admittance | Y fs | V DS=10V, VGS=0, f=1kHz 2.5 mS Input Capacitance (Common Source) C ISS 5 pF Output Capacitance (Common Source) C OSS 1 pF Reverse Transfer Capacitance (Common Source) CRSS VDS=10V, VGS=0, f=1MHz 1 pF

UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 0 6 - 0 6 7 . C „ TYPICAL CHARACTERISTICS 0.2-0.6 -0.2 -1 0.6 Drain Current vs. Gate to Source Voltage Ta=-25ĊVDS=10V 25Ċ 75Ċ -0.4-1.2 -0.8 -1.6 0 0.4 VDS=10V 6020 40 200 150 0 80 250 100 120 Power Dissipatio vs. Ambient Temperature 100 140 160 62 4 0 8 10 12 Drain Current vs. Drain Source Voltage Ta=25°C VGS=0.6V 0.4V -0.2V 0.2V 31 2 0 4 5 6 VDS=25V Ta=25Ċ Forward Transfer Admittance vs. Drain Current Drain Source Voltage, VDS (V)Ambient Temperature, Ta (Ċ) Gate to Source Voltage, VGS (V) Gate to Source Voltage, VGS (V) Drain Current, ID (mA) Forward Transfer Admittance vs. Gate to Source Voltage

UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 0 6 - 0 6 7 . C UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.