2SK2731-3 KEXIN

Document overview

www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK2731 ■ Features

VDS (V) = 30V
ID = 0.2 A
RDS(ON) ＜ 2.8Ω (VGS = 10V)
RDS(ON) ＜ 4.5Ω (VGS = 4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.2 Pulsed Drain Current (Note.1) IDM 0.8 Reverse Continuous Drain Current IDR 0.2 Reverse Pulsded Drain Current (Note.1) IDMR 0.8 Power Dissipation PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10us, Duty Cycle ≤ 1% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Cutt-off Voltage VGS(off) VDS=10V , ID=1mA 1 2.5 V VGS=10V, ID=0.1A 2.8 VGS=4V, ID=0.1A 4.5 Forward Transconductance gFS VDS=10V, ID=0.1A 100 mS Input Capacitance Ciss 25 Output Capacitance Coss 15 Reverse Transfer Capacitance Crss 10 Turn-On DelayTime td(on) 15 Turn-On Rise Time tr 20 Turn-Off DelayTime td(off) 90 Turn-Off Fall Time tf 100 Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF ns Ω VGS=10V, VDS=15V, ID=0.1A,RL=150Ω,RG=10Ω RDS(On) ■ Marking Marking KL 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 1. Gate 2. Source 3. Drain

www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK2731 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK2731 ■ Typical Characterisitics