2SK2687-01_05 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Item Symbol Rating Unit Remarks Drain-source voltage V DS 30 Continuous drain current I D ±50 Pulsed drain current I D[puls] ±200 Gate-source peak voltage V GS ±16 Maximum avalanche energy E AV 520 Maximum power dissipation P D 60 Operating and storage T ch +150 temperature range T stg 2SK2687-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) V A A V mJ W °C-55 to +150 FAP-IIIB SERIES Electrical characteristics (Tc =25°C unless otherwise specified) Thermal characteristics Item Symbol Zero gate voltage drain current IDSS Min. Typ. Max. Units V V µA mA nA mΩ mΩ S pF ns A V ns µC Min. Typ. Max. Units Thermal resistance Rth(ch-c) Rth(ch-a) 2.08 75.0 °C/W °C/W Symbol V (BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V VGS=0V Tch=25°C Tch=125°C VGS=±16V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V RG=10 Ω ID=50A VGS=10V L=100µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=2xIDR VGS=0V -di/dt=100A/µs Tch=25°C 1.0 1.5 2.0 10 500 0.2 1.0 10 100 12 17 7.5 10 22 45 2750 4130 1300 1950 600 900 13 20 55 83 180 270 150 230 1.14 1.71 85 130 0.17 Gate(G) Source(S) Drain(D) Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof
Applications
General purpose power amplifier www.fujielectric.co.jp/fdt/scd *1 L=0.277mH, Vcc=12V Item Drain-source breakdown voltage Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge TO-220AB VGS=4V VGS=10V
2SK2687-01FUJI POWER MOSFET
FUJI POWER MOSFET 2SK2687-01
2SK2687-01FUJI POWER MOSFET