2SK2641-01_01 FUJI
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- Manufacturer or author: Provided By digicamel.com
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Technical content
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UPS (Uninterruptible Power Supply) DC-DC converters
2SK2641-01 FUJI POWER MOSFET 0 50 100 150 100 120 Power Dissipation PD=f(Tc) PD [W] Tc [ o 310 t=0.01µs Safe operating area DC VDS [V] ID [A] 1µs 100ms 10ms 1ms 100µs 10µ s t TD= t T 0 5 10 15 20 25 30 35 5.5V 6.5V 10V VGS=20V VDS [V] ID [A] Typical output characteristics 0123456789 1 010 Typical transfer characteristic ID [A] VGS [V] 110 Typical forward transconductance gfs [s] ID [A] 0 5 10 15 20 7V6.5V5.5V 20V 10V VGS= ID [A] RDS(on) [ Ω ] Typical drain-source on-state resistance ID=f(VDS):D=0.01,Tc=25°C ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
2SK2641-01 FUJI POWER MOSFET -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 max. typ. Drain-source on-state resistance RDS(on) [ Ω ] Tch [ o -50 0 50 100 1500.0 1.0 2.0 3.0 4.0 5.0 6.0 min. typ. max. Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS VGS(th) [V] Tch [ o 0 20 40 60 80 100 120 140 100 150 200 250 300 350 400 Vcc=100V 250V 400V 100V 250V Vcc=400V VGS [V] VDS [V] Typical gate charge characteristic Qg [nC] 210p 100p 10n Crss Coss Ciss Typical capacitances C=f(VDS):VGS=0V,f=1MHz C [F] VDS [V] Tch=25 o C typ. Forward characteristic of reverse of diode IF [A] VSD [V] 0 50 100 150 100 150 200 250 Avalanche energy derating Eas [mJ] Starting Tch [ o RDS(on)=f(Tch):ID=5A,VGS=10V VGS=f(Qg):ID=10A,Tch=25°C IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=50V,I AV=10A
2SK2641-01 FUJI POWER MOSFET D=0.5 0.2 0.02 0.05 0.1 0.01 Transient thermal impedande Zthch=f(t) parameter:D=t/T Zthch-c [K/W] t [s] t T t T