2SK2628FS

2SK2628FS SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 5

Technical content

Features

• Low ON-reisitance.
• Low Qg.
• Ultrahigh-speed switching. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 600 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature 7 A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 6.2 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 24 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition)*3 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 98 mJ Avalanche Current *5 I AV 6A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made o f aluminium. *4 VDD=50V , L=5mH, IAV=6A *5 L≤5mH, Single pulse Marking : K2628 O2208QB MS IM TC-00001661 SANYO Semiconductors DATA SHEET 2SK2628FS N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1323-2/5 Switching Time Test Circuit Avalanche Resistance Test Circuit Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 600 V Zero-Gate Voltage Drain Current I DSS V DS=480V, VGS=0V 1.0 mA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 3.5 5.5 V Forward Transfer Admittance | yfs | V DS=10V, ID=4A 2.0 4.0 S Static Drain-to-Source On-State Resistance RDS(on) I D=2A, VGS=15V 0.9 1.1 Ω Input Capacitance Ciss V DS=20V, f=1MHz 1050 pF Output Capacitance Coss V DS=20V, f=1MHz 320 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 180 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 23 ns Rise Time tr See speci fi ed Test Circuit. 35 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 90 ns Fall Time tf See specifi ed Test Circuit. 35 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=6A 30 nC Diode Forward Voltage VSD IS=6A, VGS=0V 0.85 1.2 V Package Dimensions unit : mm (typ) 7528-001 PW=1μs D.C.≤0.5% P. G RGS 50Ω G S ID=4A RL=50Ω VDD=200V VGS=15V VOUT 2SK2628FS D 50Ω ≥50Ω RG VDD L 15V 2SK2628FS 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 10.16 0.8 15.8712.98 3.3 6.68 3.23 1.47 MAX 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18

No. A1323-3/5 25°C 75°C ID -- VGS12 428 61 2 20181614100 ID -- VDS10 24 8 1 2 106 Tc= - -25°C IT03674 IT03675 VDS=10V VGS =15V , I D=2A VGS =10V , I D=2A RDS(on) -- Tc 1.5 2.0 3.0 2.5 1.0 0.5 IT03677 --50 75 --25 150 5025 125 1000 RDS(on) -- VGS 0.9 1.0 1.1 1.2 1.3 1.4 0.8 121001 8 2 0 81 4 1 6462 IT03676 Tc=25°C ID=6A4A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C VGS=6V 10V 15V IS -- VSD3 0.01 0.001 0.1 1.0 Tc=75 --25 Ciss Coss Crss f=1MHz Ciss, Coss, Crss -- VDS 100 1000 15 20 25 3051 0 IT03680 IT03679 0 5 10 15 20 25 30 VGS -- Qg IT03681 Tc= --25 25°C 75°C VDS=10V VGS=0V 1.0 0.1 27 350.1 1.0 27 35 10 2 IT03678 VDS=200V ID=6A Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V | yfs | -- ID Forward Transfer Admittance, | yfs | -- S

No. A1323-4/5 A S OSW Time -- ID 0 20 40 60 80 100 120 140 160 PD -- Tc IT03685 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 PD -- Ta IT03684 Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C 10μs100 μs1ms 10ms 100ms DC operation 0.1 0.01 1.0 37 5 10 23 7 51.0 23 7 52 3 7 51000.1 1000 IT14036 IDP=24A Operation in this area is limited by RDS(on). IDC=7A IDpack=6.2A Tc=25°C Single pulse PW≤10μs 100 1000 1.020.1 53 237 1025 37 td(on) td(off) tf tr VDD=200V IT03682

No. A1323-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2008. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SK2628FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.