2SK2625ALS SANYO

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Low Qg.
  • Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 600 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature 5 A IDpack*2 SANYO’s ideal heat dissipation condition 4.4 A Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% 16 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition) 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *3 E AS 87 mJ Avalanche Current *4 I AV 4A *1 Shows chip capability *2 Package limited *3 VDD =50V , L=10mH, IAV =4A *4 L≤10mH, single pulse Marking : K2625

No. A0359-2/5 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 600 V Zero-Gate Voltage Drain Current I DSS VDS=600V, VGS=0V 1.0 mA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 3.5 5.5 V Forward Transfer Admittance yfs VDS=10V, ID=2.5A 1.5 3.0 S Static Drain-to-Source On-State Resistance RDS(on) I D=2.5A, VGS=15V 1.5 2.0 Ω Input Capacitance Ciss V DS=20V, f=1MHz 700 pF Output Capacitance Coss V DS=20V, f=1MHz 220 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 110 pF Total Gate Charge Qg V DS=200V, ID=5A, VGS=10V 20 nC Turn-ON Delay Time t d(on) See specified Test Circuit. 20 ns Rise Time t r See specified Test Circuit. 20 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 50 ns Fall Time t f See specified Test Circuit. 25 ns Diode Forward Voltage V SD IS=5A, VGS=0V 0.88 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7509-002 Avalanche Resistance Test Circuit 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) PW=1µs D.C.≤0.5% P. G RGS=50Ω G S ID=2.5A RL=80.0Ω VDD=200V VOUTVGS=15V D 2SK2625ALS 50Ω ≥50Ω RG VDD L 15V 2SK2625ALS

No. A0359-3/5 IT03653 IT03655 IT03654 IT03656 yfs -- ID 0.1 1.0 23 5 7 1.0 23 5 7 0.001 IS -- VSD 100 1.0 0.1 0.01 VGS(off) -- Tc --50 --25 0 25 50 75 100 125 150 Ciss, Coss, Crss -- VDS 1000 100 51 0 1 52 02 5 30 Tc= --25 25°C 75°C V DS =10V V DS =10V ID =1mA Tc=75 --25 V GS =0V f=1MHz Ciss Crss Coss Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Cutoff V oltage, VGS (off) -- V Case Temperature, Tc -- °C Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF IT03651 IT03652 1.0 RDS(on) -- VGS 4.0 3.5 3.0 2.5 2.0 1.5 68 1 0 12 14 16 18 20 0.5 RDS(on) -- Tc --50 3.5 3.0 2.5 2.0 1.5 1.0 --25 0 25 50 75 100 125 150 Tc=25°C ID =1A 2.5A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Case Temperature, Tc -- °C ID=2.5A, V GS =10V ID=2.5A, V GS =15V ID -- VDS IT03649 IT03650 12 4 3 56789 10 ID -- VGS 51 0 1 5 20 10V 15V V GS =6V V DS =10V 25°C 75°C Tc= --25°C Tc=75 --25 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A

No. A0359-4/5 IT03659 PD -- Tc 20 40 60 80 100 120 140 160 IT03660 PD -- Ta 2.5 2.0 1.5 1.0 0.5 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 25 50 75 100 125 150 100 120 175 EAS -- Ta A valanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C IDP =16A DC operation PW ≤10µs 10µs100 µs 1ms 10ms 100ms Operation in this area is limited by RDS (on). IDc (*1)=5A IDpack(*2)=4.4A IT10850 0.01 1.0 1.0 0.1 23 5 7 23 5 7 23 5 710 100 1000 IT03657 SW Time -- ID 100 7 1.0 23 5 7 10 A S O V DD =200V V GS =10V td(on) td(off) tf tr Tc=25°C Single Pulse Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A *1. Shows chip capability *2. SANYO’s ideal heat dissipation condition

No. A0359-5/5PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Note on usage : Since the 2SK2625ALS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice.