2SK2624FS

2SK2624FS SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 5

Technical content

Features

• Low ON-reisitance.
• Low Qg.
• Ultrahigh-speed switching. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 600 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 3.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 12 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition)*1 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *2 E AS 49 mJ Avalanche Current *3 I AV 3A Note : *1 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made o f aluminium. *2 VDD=50V , L=10mH, IAV=3A *3 L≤10mH, Single pulse Marking : K2624 O2208QB MS IM TC-00001659 SANYO Semiconductors DATA SHEET 2SK2624FS N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1320-2/5 Switching Time Test Circuit Avalanche Resistance Test Circuit Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 600 V Zero-Gate Voltage Drain Current I DSS V DS=480V, VGS=0V 1.0 mA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 3.5 5.5 V Forward Transfer Admittance | yfs | V DS=10V, ID=1.8A 1.0 2.0 S Static Drain-to-Source On-State Resistance RDS(on) I D=1.8A, VGS=15V 2.0 2.6 Ω Input Capacitance Ciss V DS=20V, f=1MHz 550 pF Output Capacitance Coss V DS=20V, f=1MHz 165 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 85 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 17 ns Rise Time tr See speci fi ed Test Circuit. 17 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 40 ns Fall Time tf See specifi ed Test Circuit. 22 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=3A 15 nC Diode Forward Voltage VSD IS=3A, VGS=0V 0.98 1.2 V Package Dimensions unit : mm (typ) 7528-001 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 10.16 0.8 15.8712.98 3.3 6.68 3.23 1.47 MAX 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 PW=1μs D.C.≤1% P. G RGS 50Ω G S ID=1.8A RL=111Ω VDD=200V VGS=15V VOUT 2SK2624FS D 50Ω ≥50Ω RG VDD L 15V 2SK2624FS

No. A1320-3/5 td(on) td(off) tf tr 100 1.0 57 3 251.0 IT01027 VDD=200V VGS=15V 0.1 100 0.001 0.01 1.0 VGS=0V IT01026 Tc=75 --25 °C25 --50 --25 50 100 1500 25 75 125 Tc= --25°C 25°C 75°C IT01025 VDS=10V VDS=10V ID=1mA 1.0 0.1 0.1 731.0 257325 10 IT01024 Tc=25°C ID=3.0A 1.8A 1.0A 2.5 3.0 3.5 4.0 2.0 1.5 1.0 821 2 2 0 14 16 1861 04 IT01022 VGS =15V , I D=1.8A VGS =10V , I D=1.8A --50 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 6.5 2.0 1.5 1.0 0.5 50--25 150 25 75 100 1250 IT01023 IS -- VSD VGS(off) -- Tc SW Time -- ID Drain Current, ID -- A Cutoff V oltage, VGS(off) -- V Case Temperature, Tc -- °C Diode Forward V oltage, VSD -- V Source Current, IS -- A Switching Time, SW Time -- ns Drain Current, ID -- A RDS(on) -- VGS RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 25°C 75°C 3.0 3.5 4.0 4.5 5.0 2.5 2.0 1.5 0.5 1.0 2 6 12 14 16 18 1082 04 VDS=10V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 24 8 1 0 613 79 5 VGS=6V 10V 15V Tc= --25°C IT01020 IT01021 | yfs | -- ID Forward Transfer Admittance, | yfs | -- S

No. A1320-4/5 PD -- TcPD -- Ta Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 IT01031 0 20 40 60 80 100 120 140 160 IT01030 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C 1000 100 51 0 1 5 2 0 2 5 3 0 IT01028 Coss Ciss Crss f=1MHz Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF IT14035 Operation in this area is limited by RDS(on). 10μs100 μs 1ms DC operation IDP=12A A S O Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V 1.0 0.1 0.01 0.1 23 5 7 1.0 23 5 7 10 10023 25 735 7 1000 ID=3.5A PW≤10μs 10ms 100ms Tc=25°C Single pulse

No. A1320-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2008. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SK2624FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.