2SK2624ALS SANYO

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Low Qg.
  • Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 600 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 3.5 A Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation P D 2.0 W Tc=25°C2 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 49 mJ Avalanche Current *2 I AV 3A *1 VDD =50V , L=10mH, IAV =3A *2 L≤10mH, single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 600 V Zero-Gate Voltage Drain Current I DSS VDS=600V, VGS=0V 1.0 mA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 3.5 5.5 V Marking : K2624 Continued on next page.

No. A0362-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Forward Transfer Admittance yfs VDS=10V, ID=1.8A 1.0 2.0 S Static Drain-to-Source On-State Resistance RDS(on) I D=1.8A, VGS=15V 2.0 2.6 Ω Input Capacitance Ciss V DS=20V, f=1MHz 550 pF Output Capacitance Coss V DS=20V, f=1MHz 165 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 85 pF Total Gate Charge Qg V DS=200V, ID=3A, VGS=10V 15 nC Turn-ON Delay Time t d(on) See specified Test Circuit. 17 ns Rise Time t r See specified Test Circuit. 17 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 40 ns Fall Time t f See specified Test Circuit. 22 ns Diode Forward Voltage V SD IS=3A, VGS=0V 0.98 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7509-002 Avalanche Resistance Test Circuit 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) PW=1µs D.C.≤0.5% P. G RGS 50Ω G S ID=1.8A RL=111Ω VDD=200V VGS=15V VOUT 2SK2624ALS D 50Ω ≥50Ω RG VDD L 15V 2SK2624ALS

No. A0362-3/5 td(on) td(off) tf tr 100 1.0 57 3 251.0 IT01027 V DD =200V V GS =15V 0.1 100 0.001 0.01 1.0 V GS =0V IT01026 Tc=75 --25 °C25 --50 --25 50 100 15002 5 7 5 125 Tc= --25°C 25°C 75°C IT01025 V DS =10V V DS =10V ID =1mA 1.0 0.1 0.1 731.0 257325 10 IT01024 Tc=25°C ID =3.0A 1.8A 1.0A 2.5 3.0 3.5 4.0 2.0 1.5 1.0 821 2 2 0 14 16 1861 04 IT01022 ID=1.8A, V GS =15V ID=1.8A, V GS =10V --50 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 6.5 2.0 1.5 1.0 0.5 50--25 15025 75 100 1250 IT01023 yfs -- ID IS -- VSD VGS(off) -- Tc SW Time -- ID Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Cutoff V oltage, VGS (off) -- V Case Temperature, Tc -- °C Diode Forward V oltage, VSD -- V Source Current, IS -- A Switching Time, SW Time -- ns Drain Current, ID -- A RDS(on) -- VGS RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Case Temperature, Tc -- °C ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 25°C 75°C 3.0 3.5 4.0 4.5 5.0 2.5 2.0 1.5 0.5 1.0 26 1 2 14 16 181082 04 V DS =10V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 24 8 1 0 613 79 5 V GS =6V 10V 15V Tc= --25°C IT01020 IT01021

No. A0362-4/5 PD -- TcPD -- Ta Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 2.5 2.0 1.5 1.0 0.5 02 0 4 0 6 0 8 0 100 120 140 160 IT01031 02 0 4 0 6 0 8 0 100 120 140 160 IT01030 25 50 75 100 125 150 100 120 175 EAS -- Ta A valanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C 10µs 100µs100ms 1ms 10ms DC operation IDP =12A ID =3.5A 1.0 0.1 0.01 100 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 IT10851 1000 100 51 0 1 5 2 0 2 5 3 0 IT01028 Coss Ciss Crss f=1MHz Operation in this area is limited by RDS (on). PW ≤10µs Ciss, Coss, Crss -- VDS A S O Tc=25°C Single Pulse Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF

No. A0362-5/5PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Note on usage : Since the 2SK2624ALS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice.