2SK2593 PANASONIC

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Silicon Junction FETs (Small Signal) unit: mm 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching n Features l Low noies, high gain l High gate to drain voltage VGDO l Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol V DSX V GDO V GSO ID IG PD Tj Tstg Ratings -55 -55 ±30 125 125 -55 to +125 Unit V V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Input capacitance (Common Source) Reverse transfer capacitance (Common Source) Noise figure Symbol IDSS * IGSS V GDS V GSC | Yfs | C iss C rss NF Conditions V DS = 10V, VGS = 0 V GS = -30V, VDS = 0 IG = -100mA, VDS = 0 V DS = 10V, ID = 10mA V DS = 10V, ID = 5mA, f = 1kHz V DS = 10V, VGS = 0, f = 1MHz V DS = 10V, VGS = 0, Rg = 100kW f = 100Hz min 2.5 max Unit mA nA V V mS pF pF dB typ 7.5 6.5 1.9 2.5 Marking Symbol (Example): 2B * IDSS rank classification Runk IDSS (mA) Marking Symbol P 1 to 3 2BP Q 2 to 6.5 2BQ R 5 to 12 2BR 1: Source 2: Drain EIAJ: SC-75 3: Gate SS-Mini Type Package (3-pin) 1.6±0.15 1.6±0.1 1.0±0.10.75±0.15 0.45±0.1 0.50.3 0 to 0.1 0.5 0.8±0.1 0.40.4 0.2±0.1 S 10 to 20 2BS

Silicon Junction FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VDS ID ¾ VGS | Yfs | ¾ VGS | Yfs | ¾ ID C iss ¾ VDS C oss ¾ VDS C rss ¾ VDS 2SK2593 0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 06 5413 2 Ta=25˚C VGS =0 – 0.8V – 0.6V – 0.4V – 0.2V – 1.0V Drain to source voltage VDS (V) Drain current ID (mA ) 01 2 10826 4 Ta=25˚C VGS =0V – 0.2V – 0.4V – 0.6V – 0.8V – 1.0V – 1.2V Drain to source voltage VDS (V) Drain current ID (mA ) VDS =10V Ta=25˚C Ta=–25˚C 25˚C 75˚C Gate to source voltage VGS (V) Drain current ID (mA ) VDS =10V Ta=25˚C Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 01 0 826 4 VDS =10V Ta=25˚C IDSS =7.5mA Drain current ID (mA ) Forward transfer admittance |Yfs| (mS ) 01 2 10826 4 VGS =0 Ta=25˚C Drain to source voltage VDS (V) Input capacitance (Common source) Ciss (pF) 01 2 10826 4 VGS =0 Ta=25˚C Drain to source voltage VDS (V) Output capacitance (Common source) Coss (pF) 01 2 10826 4 VGS =0 Ta=25˚C Drain to source voltage VDS (V) Reverse transfer capacitance (Common source) Crss (pF)