2SK2539 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • Large | Vg! . - Small Ciss. - Small-sized package permitting 25K2539-applied sets to be made small and slim. - Adoption of FBET process. Absolute Maximum Ratings at T'a= 25°C unit Drain-to-Source Voltage Vpsx 15 OY Gate-to-Drain Voltage Veps -15 Vv Gate Current Ig 5 mA Drain Current Ip 50 mA Allowable Power Dissipation Pp 200 mW - Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit G-D Breakdown Voltage Vipryeps Ig= —10uA,Vpg=0 =15 Vv Gate-to-Source Leakage Current Igsg Voes= —10V,Vps=0 -10 nA Cutoff Voltage Voesom Vps=5VIp=10uA -0.6 -14 -30 V Drain Current Ipss Vps=5V,Vgg=0 10.0% 50.0 mA Forward Transfer Admittance {Ves 11 Vpg=5V,Ip=10mA, f=1kHz 14 21 mS

1 Yq 12 Vps=5V,Vgs=0, f=1kHz 14 29 mS

Input Capacitance Ciss Vps=5V,Vgs=0, f=1MHz 49 pF Reverse Transfer Capacitance Crss Vps=5V,Vcs=0, f=1MHz 1.4 pF : The 25K 2539 is classified by Ipgg as follows : (unit : mA) 10.0 6 20.0 [16.0 7 32.0 Marking : AK Ipss rank: 6, 7,8 Package Dimensions 2050A (unit : mm) 4 0.16 J i o 2 Pes [Ee 1; Source l | 2:Drein ae 3:Gate On SANYO: CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 32295TS (KOTO ) TA-0214 Ne5075-1/3

a . Ip - Vos Ip_- Ves % 60 20 —— 50| < < aio _] ae s ote ez pt tT te

7 Cee 8 VA

7 a, a” 7 5 sy A VA 4 po | dco 10 > a Lie paw LEE SS ee ° _ ZZ | ° 4 @ 12 6 20 28 24 20 6 12-08 04 0 Drain-to-Source Voltage,Vps — V Gate-to-Source Voltage, Vgs — V 50 !p_- Ves Bie |¥ist - Ipss Vps=6V & Vos=5V] Ipss=25mA - | f= kHz i” oe 2 x) Ey 3 3 be Bees TT = g 10 a ra og ° ZZ | a 20 16 2 -08 04 0 bl 10 3 Ss 7 1 Gate-to-Source Voltage, Vas - V Saturation Drain Current,lpgs — mA Ves(off) - loss 10 Ciss - Vps Vps=5V Ves=0V Ip=10,A\\ f=1MHz p LRT 1 1 > 7 8 mT 1] | Sz o = 70 100 5 2 3 5 7 40 2 Saturation Drain Current,Ipgs — mA Drain-to-Source Voltage, Vps — V Crss_- Vos Pp - Ta & Gs=ov = 740 t f= 1MHz & 8 20) & j Fa N\\ £ KN | 3 160 3 NX i ~ EEN i iq i. iN ‘ ah Patt ITN | [. 2 el 1.0} & ' Ps] ett TEN & | 3 co ~ pl] Tt ty | | | IN 2 zy N 10 2 3 5 0 2 0 2 40 6 8 1M 20 “40 160 Drain-to-Source Voltage,Vps — V Ambient Temperature,Ta — °C aerate Deporte te Ne5075-2/3

WI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/orime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. HB Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such olaim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Ne5075-3/3