2SK2530 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • Low voltage drive. 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2092B [2SK2530] 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3

No.6406–2/4 Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C Marking : K2530 Switching Time Test Circuit PW=10 ms D.C.≤1% 10V P. G 50W G S D ID =1A R L=100W VDD =100V VOUT 2SK2530 VIN VIN retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 052V egatloVecruoS-ot-etaGV SSG 03±V )CD(tnerruCniarDI D 2A )esluP(tnerruCniarDI PD WP £ elcycytud,sµ01 £ %18 A noitapissiDrewoPelbawollAP D 02W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– Tc=25˚C retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1= SG 0=0 52V egatloVnwodkaerBecruoS-ot-etaGV SSG)RB( IG V,Aµ001±= SG 0=0 3±V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V052= SG 0=0 .1A m tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V52±= SD 0=0 1±A µ egatloVffotuCV )ffo(SG V SD I,V01= D Am1=0 .20 .3V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01= D A1=3 .19 .1S ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR )no(SD V SG I,V01= D A1=5 .10 .2 W ecnaticapaCtupnIs siCV SD zHM1=f,V02=0 61F p ecnaticapaCtuptuOs soCV SD zHM1=f,V02=0 4F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V02=5 1F p emiTyaleDNO-nruTt d )no(t iucriCtseTdeificepseeS0 1s n emiTesiRt r tiucriCtseTdeificepseeS3 1s n emiTyaleDFFO-nruTt d )ffo(t iucriCtseTdeificepseeS0 8s n emiTllaFt f tiucriCtseTdeificepseeS0 3s n egatloVdrawroFedoiDV DS IS V,A2= SG 0=0 .15 .1V emiTyrevoceResreveRedoiDt rr IS sµ/Aµ001=td/id,A2=0 9s n

No.6406–3/4 ID -- VGS6.0 5.5 5.0 4.5 4.0 3.5 1.5 1.0 0.5 3.0 2.5 2.0 1 3456789 1 020 ID -- VDS4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 214 8 1 0 635 9 7 5.0V 4.0V V GS =3.5V IT01567 IT01568 R DS (on) -- VGS 2.0 1.6 2.4 2.8 1.2 0.8 821 2 1 4 1 661 041 8 2 0 IT01569 --60 R DS (on) -- Tc 1.2 1.6 2.0 2.4 3.2 2.8 0.8 0.4 40--40 --20 120 20 60 80 100 160 1400 IT01570 6.0V 8.0V 10.0V V DS =10V Tc= --25 °C 25°C 75°C Tc=25°C ID =1A ID =1A V GS =10V Drain Current, ID –A Drain-to-Source Voltage, VDS –V Drain Current, ID –A Gate-to-Source Voltage, VGS –V Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS (on) – W Static Drain-to-Source On-State Resistance, RDS (on) – W Case Temperature, Tc – ˚C SW Time -- ID 1.0 100 1000 23 5 7 1.00.1 23 5 IT01573 V DD =100V V GS =10V td(on) tr td(off) tf Ciss, Coss, Crss -- VDS 1000 100 10 12 14 16 18 20 22 24 26 28 304682 IT01574 f=1MHz Ciss Coss Crss IF -- VSD 0.01 0.1 1.0 IT01572 0.1 1.0 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 100.01 IT01571 75°C 25°C Tc= --25 V DS =10V V GS =0 Tc=75 --25 Forward Transfer Admittance, |yf s|–S Drain Current, ID –A |yfs | - ID Forward Current, IF –A Diode Forward Voltage, VSD –V Switching Time, SW Time – ns Drain Current, ID –A Ciss, Coss, Crss – pF Drain-to-Source Voltage, VDS –V

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2000. Specifications and information herein are subject to change without notice. 2SK2530 PS No.6406–4/4 A S O 0.1 1.0 0.01 23 5 7 1001.0 23 5 7 10 23 5 IT01575 0 20 40 60 80 100 120 140 160 PD -- Tc IT01576 DC operation10ms 1ms 100 µs 10µs Operation in this area is limited by RDS (on). 1.0 1.2 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 140 160 PD -- Ta IT01788 IDP =8A ID =2A Drain Current,ID –A Drain-to-Source Voltage, VDS –V Tc=25°C Single pulse Allowable Power Dissipation, PD –W Ambient Temperature, Ta – ˚C Allowable Power Dissipation, PD –W Case Temperature, Tc – ˚C