2SK2516-01L FUJI

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2SK2516-01L,S N-channel MOS-FET FAP-III Series 30V 13m Ω 50A 80W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 30 V Drain-Gate-Voltage (R GS =20K Ω ) V DGR 30 V Continous Drain Current I D 50 A Pulsed Drain Current I D(puls) 200 A Gate-Source-Voltage V GS ±16 V Max. Power Dissipation P D 80 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID =1mA V GS =0V 30 V Gate Threshhold Voltage V GS(th) ID =1mA V DS= V GS 1,0 1,5 2,0 V Zero Gate Voltage Drain Current I DSS V DS =30V T ch =25°C 10 500 µA V GS =0V T ch =125°C 0,2 1,0 mA Gate Source Leakage Current I GSS V GS =±16V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =25A V GS =4V 16 22 m Ω ID =25A V GS =10V 10 13 m Ω Forward Transconductance g fs ID =25A V DS =12V 17 35 S Input Capacitance C iss V DS =25V 3500 5250 pF Output Capacitance C oss V GS =0V 1650 2480 pF Reverse Transfer Capacitance C rss f=1MHz 830 1250 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =12V 15 25 ns t r ID =50A 65 100 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) V GS =10V 190 290 ns t f R GS =10 Ω 140 210 ns Avalanche capability I AV L=100µH T ch =25°C 50 A Diode Forward On-Voltage V SD IF =2xI DR V GS =0V T ch =25°C 1,25 1,80 V Reverse Recovery Time t rr IF =I DR V GS =0V 60 ns Reverse Recovery Charge Q rr -dI F /d t=100A/µs T ch =25°C 70 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 125 °C/W R th(ch-c) channel to case 1,56 °C/W

N-channel MOS-FET 2SK2516-01L,S 30V 13µΩ 50A 80W FAP-III Series > Characteristics Typical Output Characteristics Drain-Source On-State Resistance Typical Transfer Characteristics ID =f(V DS ); 80µs pulse test; T C =25°C R DS(on) = f(T ch ); I D =25A; V GS =10V ID =f(V GS ); 80µs pulse test; V DS =25V; T ch =25°C ID [A] 1 R DS(ON) [m Ω ] ID [A] 3 V DS [V ] → T ch [°C ] → V GS [V ] → Typical Drain-Source On-State-Resistance Typical Foward Transconductanc e Gate Threshold Voltage vs. T ch R DS(on) =f(I D ); 80µs pulse test; T C =25°C g fs =f(I D ); 80µs pulse test; V DS =25V; T ch =25°C V GS(th) =f(T ch ); I D =1mA; V DS =V GS R DS(ON) [m Ω ] g fs [S] 5 V GS(th) [V] 6 ID [A ] → ID [A ] → T ch [°C ] → Typical Capacitances Typical Gate Charge Characteristics Forward Characteristics of Reverse Diode C=f(V DS ); V GS =0V; f=1MHz V GS =f(Qg); I D =50A, Tc=25°C ↑ ↑ IF =f(V SD ); 80µs pulse test; V GS =0V C [nF] V DS [V] 8 V GS [V] IF [A] 9 V DS [V ] → Qg [nC ] → V SD [V ] → Power Dissipation Safe Operation Area P D =f(Tc) ID =f(V DS ): D=0,01, Tc=25°C ↑Z th(ch-c) [K/W] Transient Thermal impedance ↑ 10 ↑ 12 Z thch-c =f(t) parameter:D=t/T P D [W] ID [A] T ch [°C] → V DS [V ] → t [s ] →