2SK2410 NEC

Document overview

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Technical content

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2410 is N-Channel MOS Field Effect Transistor de- signed for high speed switching applications.

FEATURES

  • Low On-Resistance RDS(on)1 = 40 m Ω MAX. (@ V GS = 10 V, I D = 15 A) RDS(on)2 = 60 m Ω MAX. (@ V GS = 4 V, I D = 15 A)
  • Low Ciss C iss = 1500 pF TYP.
  • High Avalanche Capability Ratings
  • Built-in G-S Gate Protection Diodes QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D(DC) ±30 A Drain Current (pulse) * ID(pulse) ±120 A Total Power Dissipation (T c = 25 ˚C) P T1 35 W Total Power Dissipation (T A = 25 ˚C) P T2 2.0 W Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C Single Avalanche Current IAS 30 A Single Avalanche Energy EAS 90 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting T ch = 25 ˚C, RG = 25 Ω , VGS = 20 V → 0 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The information in this document is subject to change without notice. © 1994 DATA SHEET Document No. TC-2497 (O. D. No. TC-8029) Date Published November 1994 P Printed in Japan Drain Source Body DiodeGate Gate Protection Diode MP-45F(ISOLATED TO-220) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 15.0 ±0.3 3 ±0.1 12.0 ±0.213.5 MIN. 4 ±0.2 1.3 ±0.2 1.5 ±0.2 2.542.54 0.7 ±0.1 0.65 ±0.1 2.5 ±0.1 123 1. Gate 2. Drain 3. Source PACKAGE DIMENSIONS (in millimeters)

ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS Drain to Source On-Resistance RDS(on)1 31 40 VGS = 10 V, I D = 15 A Drain to Source On-Resistance RDS(on)2 40 60 VGS = 4 V, I D = 15 A Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 2.0 VDS = 10 V, I D = 1 mA Forward Transfer Admittance | yfs | 15 27 VDS = 10 V, I D = 15 A Drain Leakage Current IDSS 10 VDS = 60 V, V GS = 0 Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, V DS = 0 Input Capacitance Ciss 1500 VDS = 10 V Output Capacitance Coss 720 VGS = 0 Reverse Transfer Capacitance Crss 190 f = 1 MHz Turn-On Delay Time td(on) 22 ID = 15 A Rise Time tr 260 VGS(on) = 10 V Turn-Off Delay Time td(off) 130 VDD = 30 V Fall Time tf 150 RG = 10 Ω Total Gate Charge QG 50 ID = 30 A Gate to Source Charge QGS 5.0 VDD = 48 V Gate to Drain Charge QGD 15 VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.1 IF = 30 A, V GS = 0 Reverse Recovery Time trr 110 IF = 30 A, V GS = 0 Reverse Recovery Charge Q rr 320 di/dt = 100 A/ µs Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time RG = 25 Ω 50 Ω PG L VDD VGS = 20 → 0 V BVDSSIAS ID VDS Starting Tch RG = 10 Ω D.U.T. PG. t RL VDD VGS t = 1 s Duty Cycle ≤ 1 % ID 10 % 10 % 90 % 90 % 10 % 90 % ID VGS (on) td (off)td (on) ton toff tftr Test Circuit 3 Gate Charge D.U.T. RL VDD 50 Ω IG = 2 mA PG. VDD VGS RG D.U.T. VGS Wave Form ID Wave Form µ UNIT mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

TYPICAL CHARACTERISTICS (T A = 25 ˚C) 100 020 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 dT - Percentage of Rated Power - % PT - Total Power Disslipation - W Tc - Case Temperature - ˚C T c - Case Temperature - ˚C 1000 100 100 00.1 1 10 100 2 4 6 8 10 12 ID - Drain Current - A ID - Drain Current - A ID - Drain Current - A 1000 100 51 0 1 5 VDS - Drain to Source Voltage - V V DS - Drain to Source Voltage - V VGS - Drain to Source Voltage - V DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS Tc = 25 ˚C Single Pulse VGS = 10 V Pulsed VGS = 6 V VGS = 4 V TA = –25 ˚C 25 ˚C 125 ˚C VDS = 10 V Pulsed PW = 10 s 200 ms 10 s 1 ms10 ms DC Power Dissipation LimitedRDS(on) LImited (at V GS = 10 V)ID (DC) ID(pulse) µ µ

0.1 0.01 10 100 1 m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s rth (t) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 100 lyfsl - Forward Transfer Admittance - S RDS(on) - Drain to Source On-State Resistance - mΩ 1 1 0 1 0 0 5 1 01 52 02 5 ID - Drain Current - A V GS - Gate to Source Voltage - V ID - Drain Current - A T ch - Channel Temperature - ˚C RDS(on) - Drain to Source On-State Resistance - mΩ VGS(off) - Gate to Source Cutoff Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 0 0 0.5 1.0 1.5 2.0 1 10 100 –50 –25 0 25 50 75 100 125 150 VGS = 4 V VGS = 10 V Pulsed VDS = 10 V ID = 1mA VDS = 10 V Pulsed TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C Single Pulse Rth (ch - c) = 3.57 ˚C/W µµ Rth (ch - a) = 62.5 ˚C/W ID = 15 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE –50 0 50 100 150 0 0.5 1.0 1.5 2.0 100 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ISD - Diode Forward Current - A ID = 15 A Tch - Channel Temperature - ˚C V SD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 10 100 VGS = 0 f = 1 MHz VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT DYANMIC INPUT/OUTPUT CHARACTERISTICS 0.1 0 trr - Reverse Recovery time - ns VDS - Drain to Source Voltage - V 100 1000 1.0 10 100 10 20 30 40 50 60 70 80 VGS - Gate to Source Voltage - V ID = 30 A VGS ID - Drain Current - A Q g - Gate Charge - nC SWITCHING CHARACTERISTICS 0.1 1.0 td(on), tr, td(off), tf - Switching Time - ns 100 1000 1.0 10 100 td(off) ID - Drain Current - A VGS = 4 V VGS = 10 V Ciss Coss Crss di/dt = 50 A/ s VGS = 0 VDD = 48 V VDS VDD = 30 V VGS = 10 V RG = 10 Ω Pulsed td(on) tr tf

10 V VGS = 0

µ

1.0 100 50 75 100 125 150 100 IAS - Single Avalanche Energy -mJ dt - Energy Derating Factor - % L - Inductive Load - H Starting T ch - Starting Channel Temperature - ˚C SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR IAS = 30 A EAS = 90 mJ VDD = 30 V RG = 25 Ω VGS = 20 V → 0 IAS ≤ 30 A µ µ VDD = 30 V VGS = 20 V → 0 RG = 25 Ω

Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard : Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 [MEMO]