2SK2380 PANASONIC

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Silicon Junction FETs (Small Signal) unit: mm 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor n Features l Low gate to source leakage current, IGSS l Small capacitance of Ciss, Coss, Crss l SS-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. n Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol V GDO V GSO ID IG PD Tch Tstg Ratings -40 -40 125 125 -55 to +125 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Conditions V DS = 10V, VGS = 0 V GS = -20V, VDS = 0 IG = -10mA, VDS = 0 V DS = 10V, ID = 1mA V DS = 10V, VGS = 0, f = 1kHz V DS = 10V, VGS = 0, f = 1MHz min -40 0.05 max 200 - 0.5 Unit mA nA V V mS pF pF pF * IDSS rank classification typ -1.3 0.4 0.4 Runk IDSS (mA) Marking Symbol Q 50 to 100 EBQ R 70 to 130 EBR S 100 to 200 EBS 1: Source 2: Drain EIAJ: SC-75 3: Gate SS-Mini Type Package (3-pin) Marking Symbol (Example): EB 1.6±0.15 1.6±0.1 1.0±0.10.75±0.15 0.45±0.1 0.50.3 0 to 0.1 0.5 0.8±0.1 0.40.4 0.2±0.1 Symbol IDSS * IGSS V DS V GSC | Yfs | C iss C oss C rss

Silicon Junction FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VGS | Yfs | ¾ VGS | Yfs | ¾ ID C iss, Coss, Crss ¾ VDS 2SK2380 0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 2 10826 4 240 200 160 120 Ta=25˚C VGS =0.4V 0.2V – 0.2V – 0.4V – 0.6V Drain to source voltage VDS (V) Drain current ID (mA) 240 200 160 120 VDS =10V Ta=75˚C 25˚C –25˚C Gate to source voltage VGS (V) Drain current ID (mA) 1.2 1.0 0.8 0.6 0.4 0.2 VDS =10V f=1kHz Ta=25˚C I DSS =100mA Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 0 240 20016040 12080 240 200 160 120 IDSS =100mA VDS =10V Ta=25˚C Drain current ID (mA) Forward transfer admittance |Yfs| (mS ) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 VGS =0V Ta=25˚C f=1MHz C iss C oss C rss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)