2SK2339 PANASONIC

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Technical content

Silicon N-Channel Power F-MOS n Features l Avalanche energy capability guaranteed l Low ON-resistance l No secondary breakdown l Low-voltage drive n Applications l Non-contact relay l Solenoid drive l Motor drive l Control equipment l Switching mode regulator n Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability Allowable power TC = 25˚C dissipation Ta= 25˚C Channel temperature Storage temperature Symbol V DSS V GSS ID IDP EAS * PD Tch Tstg Rating 80±10 ±15 ±10 ±20 62.5 1.3 150 –55 to +150 Unit V V A A mJ W n Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Reverse recovery time Reverse recovery charge Input capacitance Output capacitance Feedback capacitance Turn-on time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS V DSS V th R DS(on)1 R DS(on)2 | Yfs | V DSF trr Q rr C iss C oss C rss ton tf td(off) R th(ch-c) R th(ch-a) Condition V DS = 70V , VGS = 0 V DS = 0, VGS =15V ID =1mA, V GS = 0 V DS =10V , ID =1mA V GS =10V, ID = 5A V GS = 4V , ID = 5A V DS =10V , ID = 5A IDR =10A, VGS = 0 L=230µ H, VDD = 30V , VGS = 0 IDR =10A, di/dt= 80A/µ s V DS =10V , VGS = 0, f= 1MHz V DD = 30V, ID = 5A V GS =10V, RL= 6Ω Min Typ 150 230 5.5 0.55 2.2 250 0.5 0.9 1.9 Max ±10 2.5 230 370 –1.8 4.2 Unit µA µA V V m Ω m Ω S V µs µs pF pF pF µs µs µs ˚C/W ˚C/W Unit : mm 1 : Gate 2 : Collector 3 : Emitter N Type Package * L= 5mH, IL= 5A, 1 pulse n Equivalent Circuit 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 G S D

R DS(on) – ID IAS – L-loadArea of safe operation (ASO) PD – Ta ID –V DS ID – VGS V th – TC R DS(on) – VGS | Yfs | – ID Power F-MOS FETs 2SK2339 0.1 0.1 100 0.5 0.3 0.2 11 00.5 50.3 3 L-load L (mH ) Abalanche current IAS (A) TC =25˚C 62.5mJ 600 500 400 300 200 100 01 0 Gate-Source voltage V GS (V) Drain-Source ON-resistance RDS (on) (m Ω ) 2468 TC =25˚C ID =5AID =2.5A Drain-Source voltage VDS (V) Drain current ID (A) 02468 1 0 1 2 VGS =10V Ta=25˚C 4.5V 3.5V PD =30W 01 0 86421 2 Drain current ID (A) Forward transadmittance | Yfs | (S) VDS =10V Ta=25˚C 100 200 300 400 500 600 02468 1 0 1 2 Drain current ID (A) Drain-Source ON-resistance RDS(on) (Ω ) (1)VGS =4V (2)VGS =10V TC =25˚C (1) (2) 0 246 1 0 8 Gate-Source voltage VGS (V) Drain current ID (A) TC =25˚C 0 40 80 120 16020 60 100 140 Ambient temperature Ta (˚C) Allowable power dissipation PD (W ) (1) (2) (1) TC =Ta (2) Without heat sink D =1.3W) 0.1 0.3 100 1055 03 30 100 Drain-Source voltage VDS (V) Drain current ID (A) Non repetitive pulse TC =25˚C IDP DC ID t=100ms t=1ms t=10ms t=100ms 0 25 50 75 100 125 150 Case temperature TC (˚C) Gate threshold voltage Vth (V) VDS =10V ID =1mA

C iss, C oss, C rss – VDS td(off), tr, ton – ID V DS, V GS – Qg Power F-MOS FETs 2SK2339 ISD – VSD R th – tP 2000 0 100 20 40 60 80 1000 500 200 100 Drain-Source voltage VDS (V) f=1MHz TC =25˚C Input capacitance, Output capacitance, C iss, Coss, Crss (pF)Feedback capacitance Coss Ciss Crss 0.05 0 2.0 Diode forward voltage VSD (V) Souce-Drain current ISD (A) 0.5 1.0 1.5 0.5 0.2 0.3 0.1 VGS =0 TC =25˚C 3.0 2.5 2.0 1.5 1.0 0.5 02468 1 0 1 2 Drain current ID (A) Switching time t (ms ) VDD =30V VGS =10V TC =25˚C td(off) tf ton 0.1 100 1000 10–4 10–3 10–2 10–1 11 0 1 0 2 103 104 Pulse width tP (s) Thermal resistance Rth (˚C/W) (1) (2) Notes: Rth was measured at Ta=25˚C and under natural convection. (1) without heat sink (2) with a 50 × 50 × 2mm Al heat sink 60 12 50 10 40 8 30 6 20 4 10 2 0 5 10 15 20 25 Gate charge amount Q g (nc) Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) VGS VDS =30V VDS ID =10A Ta=20˚C VDS =40V VDS =50V