2SK2249-01L FUJI
Document overview
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Technical content
2SK2249-01L,S N-channel MOS-FET F-III Series 30V 0,06Ω 10A 35W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 30 V Drain-Gate Voltage (R GS =20K Ω ) V DGR 30 V Continous Drain Current I D 10 A Pulsed Drain Current I D(puls) 40 A Gate-Source-Voltage V GS ±16 V Max. Power Dissipation P D 35 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID =1mA V GS =0V 30 V Gate Threshhold Voltage V GS(th) ID =1m A V DS= V GS 1,0 1,5 2,0 V Zero Gate Voltage Drain Current I DSS V DS =30V T ch =25°C 10 500 µA V GS =0V T ch =125°C 0,2 1,0 mA Gate Source Leakage Current I GSS V GS =±16V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =5A V GS =4V 0,045 0,080 Ω ID =5A V GS =10V 0,035 0,060 Ω Forward Transconductance g fs ID =5A V DS =10V 5 10 S Input Capacitance C iss V DS =25V 900 1350 pF Output Capacitance C oss V GS =0V 600 900 pF Reverse Transfer Capacitance C rss f=1MHz 160 240 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =10V 10 15 ns t r ID =10A 15 25 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) V GS =10V 110 170 ns t f R GS =25 Ω 60 90 ns Avalanche Capability I AV L=100µH T ch =25°C 10 A Diode Forward On-Voltage V SD IF =2xI DR V GS =0V T ch =25°C 1,0 1,5 V Reverse Recovery Time t rr IF =I DR V GS =0V 35 ns Reverse Recovery Charge Q rr -dI F /d t=100A/µs T ch =25°C 0,05 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 125 °C/W R th(ch-c) channel to case 3,57 °C/W
N-channel MOS-FET 2SK2249-01L,S 30V 0,06Ω 10A 35W F-III Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. T ch Typical Transfer Characteristics ↑ 1 ↑ 2 ↑ 3 ID [A] R DS(ON) [ Ω ] ID [A] V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source-On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch ↑ 4 4 ↑ 5 ↑ 6 R DS(ON) [ Ω ] g fs [S] V GS(th) [V] ID [A] → ID [A] → T ch [°C] → Typical Capacitance vs. V DS Typical Input Charge Forward Characteristics of Reverse Diode ↑ 7 ↑ 8 ↑ ↑ 9 C [nF] V DS [V] V GS [V] IF [A] V DS [V] → Q g [nC] → V SD [V] → Allowable Power Dissipation vs. T C Safe operation area Transient Thermal impedance ↑ 10 ↑ 12 ↑ P D [W] ID [A] Z th(ch-c) [K/W] T c [°C] → V DS [V] → t [s] → This specification is subject to change without notice!