2SK2218 SANYO

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+ Adoption of FBET process. - Amateur radio equipment. - UHF amplifiers, MIX, OSC, analog switches. - Large | Yq. - Small Ciss. Absolute Maximum Ratings at Ta=25°C unit Drain-to-Source Voltage Vpsx 15 Vv Gate-to-Drain Voltage Veps -15 v Gate Current Ig 10 mA Drain Current Ip 100 mA Allowable Power Dissipation Pp 400 mW Mounted on ceramic board 800 mW (250mm? X 0.8mm) Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta = 25°C min typ max unit G-D Breakdown Voltage Vierieps Ig=—10pA,Vps=0 —15 Vv Gate Cutoff Current Igss Vas=—10V,Vpg=0 -1.0 nA Gate-to-Source Cutoff Voltage Vago Vps=5V,Ip=100pA 12 -26 -4.5 v Drain Current Ipss* Vps=5V,Vgg=0 40% 75X mA Forward Transfer Admittance | Yq, | Vps=5V,Vas=0, f=1kHz 24 «32 mS Input Capacitance Ciss Vps=5V,Ves=0, f= 1MHz 5.5 pF Reverse Transfer Capacitance Cras Vps=5V,Vas=0, f=1MHz 16 pF Noise Figure NF Vps=5V,Rg=1kQ,Ip=5mA 1.3 dB f=1kHz (Static Drain-to-Source Rpson) Ip=10mA,Vgs=0 30 Q ON-State Resistance * :Pulse Test Pulse Width<2mS 2: The 2SK2218 is classified by Ipgg as follows (unit : mA). - ackage Dimensions Marking : KN (unit : mm) Ipgg ranks : 3, 4,5 ‘s 15 it | Hi { al ea Ky : o Oe 3: Drain SANYO: PCP (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90195YK (KOTO) BX-0347 No.5202-1/5

: rf : im < 60 80! E 2 = = 60! Vgs=0 2 60} Ves=0 i) : — —0.5V —0.5V 20 20 =1.5V) Zo ata TT * y ° 1 2 3 & 5 () 2 4 6 8 10 Drain-to-Source Voltage, Vps ~ V Drain-to-Source Voltage, Vps — V Ip - Vos Ip - Ves 10 10 i < 60 < 80 i ry € 1 /| ’ 2 ay J ‘ 60 . = 60) i Sf § O 5 40 Z 40 LX z a a 20 7. a 20] ¢- 0 nee ° | | lw) | Gate-to-Source Voltage, Ves — V Gate-to-Source Voltage, Veg — V @, [¥isl - Iss a. 1¥isl - Ip Vps=5v 2 |Vps=5V Sis er = - : ett to yon = | Vig} 2(Vos=0) > nan > g a : Wo | < | we 1.0 ¥ : i |] Seo eo a HH E Eg & 10 a 2 T 10 T 10 Drain Current, Ipgs — mA Drain Current, Ipgs — mA - Ves(off) - Iss Rps(on) ~ Ipss . Vps=5V Ip=10mA] € Ip=100,A| @ Vos=0 i} 5) (s) ag = g fs 3 5 ae Fi 23 . 3 1.0) 23 5 2 10) 1 10 . 100 ' Drain Current, Ipgg — mA Drain Current, Ipgs — mA. No.5202-2/5

2 Ciss - Vos ’ Crss_- Vos

Ves=0 % rane} 6 TE TT TT * elit if siti Ti ttt] #4 g 3 a JRA | 2 ae sd = Fy {| ee P| 4 SO 3 By att eg, ary $ Bu oO ee Pee a 2 EB 2 ; tit elit TTT 1.0, se gy bd 1.0 10 10 10 Drain-to-Source Voltage, Vps — V Drain-to-Source Voltage,Vps — V Pp - Ta Vig - Voc = 1 40) Ip=10mA 8 f=100MHz Common Gate| A 800) ii int Xe 30 } £ Ke a 3 [Nx 2 B60 Nee Big 3 ' = — EERE ; Fy TT * x, ’ s “te |_| . s ao, 1 4 ay | Pee Res, 9 aj] TTT RSs | | < [SS °% 20 40 Cy ® WM 120 160 60 % 2 4 6 8 10 12 1% Ambient Temperature,Ta —°C Drain-to-Gate Voltage,Vpg ~ V

0 Vtg - Voc Vig - Voc

Tp=10mA ‘ Tp=10mA f= 100MHz £=100MHz Common Gate 4 Common Gate! ° | o Q eal = VX Fy a) s t \\ |p fo ° Chi pet ot]

0 NE a ee es | “1 fs ee

0 2 4 6 8 10 2 % 9 2 4 6 8 10 12 14 Drain-to-Gate Voltage,Vpg ~ V Drain-to-Gate Voltage,Vpg — V Yog - Voc Vig - | 9 D

24 Ip=10mA 40 Voozsv

f=100MHz £=100MHz 2.9) rat ‘Common Gat 20 Common Gate ets \\ ste g Pt tt fa va AE | era ," rf beet | | tp iNT TT] 4 PT Swe] a o | | - Raa () 2 . 4 6 8 10 2 % 105 2 4 6 8 10 12 16 Drain-to-Gate Voltage,Vpg ~ V Drain Current, Ip — mA No.5202-3/5

° Voo=eV 20 pe=8V f=100MH2 f=100MHz Common Gate Common Gate| 30 16 ~(d 1.2 — | 99 Big Le _ 1 [ oe ; aa iat 08 & a ea a o 2 4 6 6 0 WW 1% o 2 4 6 6 0 2 % Drain Current, Ip — mA Drain Current, Ip — mA Yog - I Vig - f 2.6 og D 40 ‘9 Vpg=5V Vpc=5V. f=100MHz Ip=10mA 2.0] ‘Common Gate} 3 Common Gate Cs ‘4 i“ _ "aa = = ' a Ct | 4 = 10 Foal L, ant! é “el TT pt ‘Te [TTT , Pi iti 0 2 «© 6 6 0 W% % 0 10 20 300 4m 5 6 70 ew Drain Current, Ip — mA Frequency, f - MHz Vig - f Vig - f 40 8 4 ie] Vog=5V Vpo=5v Ip=10mA Ip=10mA Common Gate Common Gate| 30] 3 ' 6 — t— u 2 Sea 2 = —i | : i U P| | | | 0 100 2m 30 6 500 60 700 60 o mm 2 30 40 50 60 700 6m Frequency, f — MHz Frequency, f — MHz Yog - f 1% 29 Vpe=5 Ip=10mA A VL eae 1 4 Z| ej | oT » & 4 Pi) AA PIA er TT 4a ae [Fri] | a CC Cr) Frequency, f — MHz No.5202-4/5

S Parameter Frequency Characteristics S Parameter Frequency Characteristics (Common gate) (Vpg=5V, Ip=10mA) (Common gate) (Vpg=5V, Ip=10mA) we 60" R | 100 SITES EN CXL AS i150 LX KIS Ate LSS TTS OE wi CEA LOTTE SSS [7 f=100MHz KXIN LIRR seek £=700MHz 9 a s06 HESS EES loots 0 KS i LU ESSE f=100MHz LY gee! SHERRATT xy SKIT ROT

2 LEE _ SRT

OX, asd LITO KE Po “j150 CQ > Ga SREY Sez [7 Ss 15 100 <a oO

123 CAY Se Sat

S Parameter (Common gate) Vpo=5V, Ip=10mA, Zo=502 Freamno [| 18ui [6 [ist | sm | isi | ese | se! | sm TE No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shalt: D Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 1995, Specifications and infornation herein are subject to change without notice. No.5202-5/5