2SK2211 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET For switching n Features
- Low ON-resistance RDS(ON)
- High-speed switching
- Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. n Absolute Maximum Ratings Ta = 25°C 1: Gate 2: Drain 3: Source Mini-Power Type Package (3-pin) Parameter Symbol Conditions Min Typ Max Unit Drain to Source cut-off current I DSS V DS = 25 V, VGS = 01 0 mA Gate to Source leakage current I GSS V GS = –15 V, VDS = 0 –10 mA Drain to Source breakdown voltage VDSS ID = 0.1 mA, VGS = 03 0 V Gate to Source voltage V GSS IGS = 0.1 mA, VDS = 0 –20 V Gate threshold voltage V th V DS = 5 V, ID = 1 mA 0.8 2 V Drain to Source ON-resistance * R DS(ON)1 V GS = 4 V, ID = 0.5 A 0.48 0.75 W R DS(ON)2 V GS = 10 V, ID = 0.5 A 0.35 0.6 W Forward transfer admittance ‰Yfs‰ V DS = 10 V, ID = 0.5 A 0.5 S Input capacitance (Common Source) C iss V DS = 10 V, VGS = 0, f = 1 MHz 87 pF Output capacitance (Common Source) C oss 69 pF Reverse transfer capacitance (Common Source) C rss 23 pF Turn-on time t ON V GS = 10 V, ID = 0.5 A, VDD = 10 V 12 ns Fall time t f R L = 10 W 160 ns Turn-off time (delay time) t OFF 60 ns n Electrical Characteristics Ta = 25°C Unit : mm Marking Symbol: 2M Note) *: Pulse measurement Parameter Symbol Ratings Unit Drain to Source voltage V DS 30 V Gate to Source voltage V GSO –20 V Drain current I D –1A Max drain current I PD –2A Allowable power dissipation * PD 1W Channel temperature P ch 150 °C Storage temperature T stg -55 to +150 °C Note) * PC board: Copper foil of the drain portion should have a area of 1 cm2 or more and the board thickness should be 1.7 mm. 4.5±0.1 2.6±0.1 2.5±0.1 0.4 max.1.0+0.1 –0.2 4.0+0.25 –0.20 3.0±0.15 1.5±0.1 0.4±0.08 0.5±0.08 1.5±0.1 0.4±0.04 1.6±0.2 45˚ marking 321 Internal Connection D S G
2SK2211 Silicon MOS FETs (Small Signal) ID ¾ VDS ID ¾ VDS R DS ¾ ID ‰Y fs‰ ¾ ID C iss, Coss, Crss ¾ VDS R DS ¾ VDS 01 2 10826 4 3.0 2.5 2.0 1.5 1.0 0.5 Ta = 25°C 3.0 V 2.5 V 2.0 V V GS = 3.5 V Drain to source voltage VDS (V ) Drain current ID (A ) 06 5413 2 3.0 2.5 2.0 1.5 1.0 0.5 V DS =10 V Ta = 25°C Gate to source voltage VGS (V ) Drain current ID (A ) 01 2 10826 4 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 ID = 0.5 A Ta = 25°C Gate to source voltage VGS (V ) Drain to source ON-resistance RDS(ON) (W ) 1.4 1.2 1.0 0.6 0.8 0.4 0.2 Ta = 25°C V GS = 4 V 10 V Drain current ID (A ) Drain to source ON-resistance RDS(ON) (W ) 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 V DS = 10 V f = 1 kHz Ta = 25°C Drain current ID (A ) Forward transfer admittance |Y fs| (S) 0.3 10 13 0 3 100 300 140 120 100 f = 1 MHz Ta = 25°C C iss C oss C rss Drain to source voltage VDS (V ) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)