2SK2211_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 MOSF ET N-Channel MOSFET 2SK2211 ■ Features
- VDS (V) = 30V
- ID = 1A
- RDS(ON) ＜ 0.75Ω (VGS = 4V)
- RDS(ON) ＜ 0.6Ω (VGS = 10V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 1 Pulsed Drain Current IDM 2 Power Dissipation PD 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=100μA, VGS=0V 30 Gate to Source voltage VGSS IGS=100μA, VDS=0V ±20 Zero Gate Voltage Drain Current IDSS VDS=25V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±15V ±10 uA Gate threshold voltage VGS(th) VDS=5V ID=1mA 0.8 2 V VGS=4V, ID=0.5A 0.75 VGS=10V, ID=0.5A 0.6 Forward Transconductance gFS VDS=10V, ID=0.5A 0.5 S Input Capacitance Ciss 87 Output Capacitance Coss 69 Reverse Transfer Capacitance Crss 23 Turn-On DelayTime td(on) 12 Turn-Off DelayTime td(off) 60 Turn-Off Fall Time tf 160 V pF Static Drain-Source On-Resistance RDS(On) Ω VGS=10V, VDS=10V, ID=0.5A, RL=10Ω VGS=0V, VDS=10V, f=1MHz ns ■ Marking Marking 2M D S G
www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK2211 ■ Typical Characterisitics ID VDS ID VDS RDS ID Yfs ID Ciss, Coss, Crss VDS RDS VDS 210 1082 64 3.0 2.5 2.0 1.5 1.0 0.5 Ta = 25°C 3.0 V 2.5 V 2.0 V VGS = 3.5 V Drain to source voltage VDS (V) Drain current ID (A) 60 541 32 3.0 2.5 2.0 1.5 1.0 0.5 VDS =10 V Ta = 25°C Gate to source voltage VGS (V) Drain current ID (A) 210 1082 64 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 ID = 0.5 A Ta = 25°C Gate to source voltage VGS (V) Drain to source ON-resistance RDS(ON) (Ω) 1.4 1.2 1.0 0.6 0.8 0.4 0.2 Ta = 25°C VGS = 4 V 10 V Drain current ID (A) Drain to source ON-resistance RDS(ON) (Ω) 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 VDS = 10 V f = 1 kHz Ta = 25°C Drain current ID (A) Forward transfer admittance |Yfs| (S) 0.3 101 303 100 300 140 120 100 f = 1 MHz Ta = 25°C Ciss Coss Crss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)