2SK2199 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • Low ON resistance. - Very high-speed switching. - Low-voltage drive. Absolute Maximum Ratings at Ta= 25°C unit Drairrto-Source Voltage Vpss 250 Vv Gate-toSource Voltage Vass +20 v Drain Current(DC) Ip 800 mA Drain Current(Pulse) Ipp PWS 10zs, duty cycleS1% 3.2 A Allowable Power Dissipation Pp 1 W Te= 25°C 15 WwW Channel Temperature Tech 150 °C Storage Temperature Tstg —55to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Visrypss Ip=1mA,Vgs=0 250 v (Fer Gate Voltage Ipss Vps=250V,Vgs=0 100 yA Drain Current Gate+to-Source Leakage Current Igss Voes= £18V,Vps=0 +10 yA Cutoff Voltage Vesom Vps=10V,Ip=1mA 15 2.5 Vv Forward Transfer Admittance | Ys,| = Vps=10V,Ip=400mA 06 09 S {Static Drain-toSource Rpson) Ip=400mA,Vgg=10V 3.5 5 a ON State Resistance Input Capacitance Ciss Vps=20V,f=1MHz 80 pF Output Capacitance Coss Vps=20V,f=1MHz 20 pF Reverse Transfer Capacitance Crss Vps= 20V,f=1MHz 8 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 10 ns Rise Time tr. % 10 ns Turn-OFF Delay Time tarom) ia 65 ns Fall Time te a 30 ns Diode Forward Voltage Vsp Is=800mA,Vgs=0 1.0 v Switching Time Test Circuit Package Dimensions 2083B Package Dimensions 2092B (unit: mm) 65_ 2.3 (unit : mm) Vpp=100V ” s0v pp l _ mats | f=! 4 ov Tp=400mA 5 — 0. Fe ossh art .S, Oe A iS ~ i oe) oa os 302 e 4 PG —— 1:Gate 50a s| 28K2199 123 1:Gate cma 2:Drain 2:Drain 3:Source ee § Source 4:Drain : Drain 23-+44--4e23 : te gawvo-7P SANYO: TP-FA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41894HO (KOTO) BX-0119 No.4557-1/3

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pnb NSA % Le} S TINA NNT ep PAT ; z f <1ofbetfto SNe aa 1 eee IN St & os gt TP SS 4+ Zid IN FJ] Operation in this INS K WNT] 4 NX © Jareais limited by Rpsion SNS Aa \\ 3a] RENN pee ee | a SH E¢ NI 3S 0, < a & HEH a for NT 3 Lit tin [| [| [{ Tt | 34 } j p] Up NE [| Py TT 32 oot | fF E PP TT Uy dit iit) 10 100 C) 20 0) 60 80 100 0 40 160 DrairrtoSource Voltage, Vps — V Case Temperature,Te ~ °C Pp ~ Ta 12 D t 1.0 ar Py Zoe IS Spock & 4 | H Lt | <i ae B 0.6! INS <i O04 N 3g 0.2 NJ °% 20 «0 Co) 6 Ww 1270 «0 160 Ambient Temperature,Ta — °C II No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. BB Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. BM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. . No.4557-3/3