2SK2171 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
Features
- Adoption of FBET process. - Large | ¥g!. - Small Ciss. + High Pp allowable power dissipation. Absolute Maximum Ratings at Ta = 25°C unit. Drain-to-Source Voltage Vpsx 40 v Gate-to-Drain Voltage Vaps -40 Vv Gate Current Ig 10 mA Drain Current Ip 100 mA Allowable Power Dissipation Pp 400 mW Mounted on ceramic board 800 mW (250mm?x 0.8mm) Junction Temperature Tj 150 «°C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit G-D Breakdown Voltage Visryaps Ig=—104A,Vps=0 —40 Vv Gate-to-Source Leakage Current Igss Ves= —20V,Vps=90 -10 nA Cutoff Voltage Vesiom Vos=10V,Ip=1004A —2.0 -3.0 -50 V Drain Current Ipsst Vp = 10V,Vgg=0 40% 15% mA Forward Transfer Admittance | Yp | (2) Vpg=10V,Ip=10mA, f=1kHz 10 15 ms 1 ¥p5 | (2)Vps= 10V,Vgs=0, f= 1kHz 22 30 mS Input Capacitance Ciss Vps= 10V,Vgs=0, f=1MHz 11 pF Reverse Transfer Capacitance Crss Vps= 10V,Vgs=0, f= 1MHz 2.5 pF Noise Figure NF Vps= 10V,Rg=1k0,Ip=1mA, 15 dB f=1kHz Static Drain-to-Source Rpsion) Vps=10mV,Vgs=0 30 aQ ON-State Resistance *Pulse Test Pulse WidthS 2mS . + % : The 29K2171 is classified by Ipgg as follows : (unit: mA) Package Dimensions 2125 (unit : mm) 45, 15 40 3 52 48 4 63 57 5 75 hss * Marking : KM BE Ipss rank : 3, 4,5 ae $f i [| te =3.0—* Oe 1: Source 3: Drain SANYO: PCP (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 32295TS (KOTO) BX-0033 Ne4871-1/5
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0 SS se | —— rr
0 1 2 3 4 5 [+] 4 8 12 16 20 Drain-to-Source Voltage, Vps — V Drain-to-Source Voltage, Vps — V Ip = Vps 'p_- Ves TT “) CLIT Er S SA Z| ‘ | /' !
26 A, Z| oe so=
gs WP , ey, AS es a, Ye | —| » Pia bo | ay | YY ~- =2.5V or ALAS lo 0 10 20 30 60 50 -6 5 4 3 —2 eal C) Drain-to-Source Voltage, Vps - mV Gate-to-Source Voltage,Vgs - V 'p_~ Ves 10 Ves(off) - !pss Vps=10V j Vps=10V rf} ft il Ipgs=60mA, a 1p 1002A Pt tt ay an) &. Vie Z a — | ; Vy Lik 3 2, > LY we 3 Gate-to-Source Voltage,Vgs — V Saturation Drain Currentjlpss — mA Rps(on)_~- pss Q \\Visl - loss Vos=0V = kHz Gq — ap oR | | | fad | ——+-—. 3 ‘ — 5 3 g8 FE é & a a 32 6 Zz * 2 1 5 0 Lal b.) Saturation Drain Current,Ipgs — mA Saturation Drain Current [pgs — mA —___ Saturation DrainCurrentilngs~ mA SaturationDrainCurrentilpss—= mA Ne4871-2/5
2 \\¥ist_- Ip Vig - to 2 env “Foray, rT ] Se a a A Oh ao|Common gate L. TTPO ST PTTL sostetet | ys - ee oe p> anes ie 7 PTT OF, eft [TT TP Try | ell iti] TTT 4 54 | | Fa Poorer oe TT & 10 10 0 +. 8 WwW 16 Drain Current,Ip — mA. Drain Current,lp ~ mA Vtg - Voe Vig - Ib
20 Ip=10mA T= 100
£2100MHz f= TooMHz 2 nw ‘Common gate 29{Common gate Se a RJ J s » sR ef | . SS ee ee ee eee 3 ee 3 a 0 + 8 VW 16 oO 6 6 12 16 Drain-to-Gate Voltage,Vpg ~ V Drain Currentlp — mA a Vig - Voc a Yog - I Tp=l0mA “Wog=l0v £2.100MHa t= T00MHz Bog 2 | | yi | [ [| og | | ga Bt — | | r | % ‘ 6 12 16 % & a 12 16 Drain-to-Gate Voltage,Vpg — V Drain Current,Ip ~ mA. a2 Yog - Voc 12 Vig - I . Tp=10mA . Vog= lov f=100MHz t= JooMHz ~~ TS & Common gate 10 Common gate ; se aa ey Tp fp Ca 'yt-6 {206 | MV 6d % & 8 12 16 °% ry 8 12 16 Drain-to-Gate Voltage,Vpg — V Drain Current,Ip — mA Ne4871-3/5
A Vig - VoG Vig - f 2.8 — 24) = 5 2.4 r A Common gate 20 Common gate ke <a °0 1,2) Cy POTN) FL bee a ae oy 4 LJ 12 16 % 20 40 60 8O 100 Drain-to-Gate Voltage,Vpg - V Frequency,f — MHz . ima a 7A He tr 3 3 . = Pi tt an | f C) 20 40 60 8oO 100 0 20 40 60 8o 100 Frequency,f — MHz Frequency,f — MHz
5 Vig - f 1 Ciss - Vps
fe | |) Pe op) HERES 1 2 ne ae a 7 ef 7 | TUT, TT | iY jet | | ¢ eee ean "Eee TH i) 70 40 6@ 8O 100 1.0 im Bal Frequency,f — MHz Drain-to-Source Voltage, Vps — V Crss_- Vps Pp - Ta i | = 1000; pt LLL PR) ETT ET TT] @ 1 £ 10) eS PRTreroory) E Ka 2 a Z 600} See EL PNT Tg Pi Tt Re TT sq |] | RPE ft to Re, : t—| A Whe, Cx 2 1.9) 3 20 a SC ea a SR sopra 2, me 1.0 10 0 2 7) 60 a 10 1220 “uo 160 Drain-to-Source Voltage, Vps — V Ambient Temperature,Ta — °C. N04871-4/5
TNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/orime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Mi Anyone purchasing any products described or contained herein for an above-mentioned use shall: @® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Ne4871-5/5