2SK2169 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Low ON resistance. - Very high-speed switching. - Low-voltage drive. Absolute Maximum Ratings at Ta= 25°C unit Drain-toSource Voltage Vpss 250 v Gate-to-Source Voltage Voss +20 Vv Drain Current(DC) Ip 400 mA Drain Current(Pulse) Ipp PW 10gs, duty cycleS1% 1.6 A Allowable Power Dissipation Pp 1 Ww Channel Temperature Tech 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit D-S Breakdown Voltage Veerypss Ip=1mA,Vgs=0 250 Vv Zero Gate Voltage Ipss Vps=250V,Vgs=0 100 vA Drain Current Gate to Source Leakage Current Igss Voas= £18V,Vps=0 +10 pA Cutoff Voltage Vesom Vps=10V,Ip=imA 15 2.5 Vv Forward Transfer Admittance | ¥,;| Vps=10V,Ip=200mA 04 0.6 Ss {Static Drain-to-Source Rpston) Ip=200mA,Vgs=10V 3.5 5 a ON State Resistance Input Capacitance Ciss Vps= 20V,f=1MHz 80 pF Output Capacitance Coss Vps=20V,f=1MHz 20 pF Reverse Transfer Capacitance Crss Vps= 20V ,f=1MHz 8 pr Turn-ON Delay Time tacon) See specified Test Circuit. 10 ns Rise Time tr ” 10 ns Turn-OFF Delay Time taco ” 65 ns Fall Time te ” 40 ns Diode Forward Voltage Vsp Is=400mA,Vgs=0 0.9 Vv Switching Time Test Circuit Package Dimensions 2087A as (unit : mm) 1s Vin Yoo=s00v 6.9 ° 1.0 *ov IL 1p=200mA Vin RL =5000 al oI Ty l) thos PG 12 3 45 son 8| 28ke169 2:Drain 3:Gate 2.56 254 SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN J 41894HO (KOTO) BX-0118 No.4556-1/3
20, Ip - Vos 0.8 'p_- Vos Vos=2.8V | ff i ‘|| il ae i. ‘eat —_| 2 120 + i on a 5° fs ©} 80rF is} f s ‘a : ie ee — Ft ° 0 4 8 12 16 20 0 1 2 3 4 s DraintoSource Voltage,Vps — V Drainto-Source Voltage,Vps — V o lyse l - Ip ‘ Rps(on)_- Vas oes SO an Ga ee 0 —— z. feta AO g§JoU | U224 Pry 6&3, (Coe a E roi | til 4a, iA =e \\Siceeenee Amel LH CCSRES EEE 01 Ee Poh est] tit TP yr 5 0.01 oO. T 10 0 2 4 6 8 10 12 % 16 18 20 Drain CurrentIp — A \\ Gate toSource Voliage,Vgs - V Rps(on) - Ta Ciss, Coss, Crss - Vps ‘LLL! LL lee ee ee e7 Vgg=10V tt ig j A J — —— — A a ges > ek HCP) pb et Ea, A i SS i ee eee Sa, | 4 4 > a | 5 ee Be, we Pi TT TTT tty SS = ol g —_[ -60 -40 -20 0 20 40 60 80 10 120 140 0 20 40 60 80 10 120 Ambient Temperature,Ta — °C Drain-toSource Voltage, Vps — V swTime - Ip ASO | Vpp=100V i= sae 1 109 Earp Pes _ PRIS BT SS POON Ee 2 a a cee ee a eee ey, | | Pee 3 hor Nero F: B 2 Rady Reed est g Ds ——— = SS eee ES _-_ ae {Sree iis] gle pulse JF 4 On . 1.0 1.0 10 1 Drain CurrentIp - A DraintoSource Voltage,Vps — V No.4556-2/3
12 > Ed 21.0 a Bos B06 IN x Be TEN TT z fos 2 NX E02 Ss é ° iS o 27 0 6 6 10 10 uO 160 Ambient Temperature,Ta — °C MNo products desoribed or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. SSS No.4556-3/3