2SK2167 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Low ON resistance. : Very high-speed switching. > Low-voltage drive. Absolute Maximum Ratings at Ta= 25°C unit Drain-to-Source Voltage Vpss 250 Vv Gate-to-Source Voltage Voss +20 v Drain Current (DC) Ip 400 mA Drain Current (Pulse) Ipp PWS 10s, duty cycleS 1% 1.6 A Allowable Power Dissipation Pp Te=25°C 3.5 Ww Mounted on ceramic board 13 °° W (250mm? x 0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit D-S Breakdown Voltage Vierpss Ip=1mA,Vgs=0 250 v Zero-Gate Voltage Drain Current Ipgg Vps=250V,Vgs=0 100 yA Gate-to-Sourse Leakage Current Iggg Ves= £18V,Vps=0 +10 yA Gate-to-Sourse Cutoff Voltage Ves Vps=10V,Ip=1mA 1.5 2.5 Vv Forward Transfer Admittance | Vel Vpg=10V,Ip=200mA 270 400 mS Static Drain-to-Source Rpgon) Ip=200mA,Vgg=10V 8 12 #2 ON-State Resistance Input Capacitance Ciss Vps=20V, f=1MHz 37 pr Output Capacitance Coss Vps= 20V, f= 1MHz 10 pF Reverse Transfer Capacitance Crss Vps=20V, f= 1MHz 4 pF Turn-ON Delay Time tavon) See specified Test Circuit 10 ns Rise Time te ” 10 ns Turn-OFF Delay Time tacom ” 35 ns Fall Time ty ” 45 ns Diode Forward Voltage Vsp Is=400mA,Vgg=0 1.0 v Switching Time Test Circuit Package Dimensions 2062A Vop=100V (unit : mm) vin 9 ts tov ny rp-200ma pis : vin RL =5000 Dic. $x o[—Your ta ay P.G @ = 310: 0.6 aske4167 1: Gate Wo ody ty 2: Drain
04794 SANYO: PCP
. (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 51794TH (KOTO) BX-0113 No.4631-1/3
Ip _- Ves tp fo If jue oe ee aw A, ce Gee 8 20 _—- r | B20 J | en ee 5 Wy | | 1 4 4 6 8 " ° Gate-to-Souree Voltage,Vgs — V ° Srain-to- Voltage,Vps - V R en Ip=200mA\\} 6s LTT TT sli oe 3 7 COPE eee pL LPT pe et a PUP) coef POMC acre 34 > * LE ol ptt te 80 10 120 140 % Soteviey © 7 “80 “AO ~ ase TemperaturerTe °C ° 7 Gate-to-Source Voltage Ves —V swrime - Ip — Tr Es = oC. 1 N OSes oe Poo ea! te SE (COCA 5 PS At ESE AIG ; 5 ns i : H+} +--+ + it] Lj : pope = r000 Drain Current, ~ mA " i ~mA ASO Pitiss, Coss Coss - Vps tae NS See EES HE SSS SS] i Peers g PE? SSE a fe a eo mewek pH 1.0 es a ee a ASingle pulse c
9 Cn "Drain-to-Souree Voltage,Vpe — V |
° Deain-to Source Voltage,Vps Ae
eM ° mA ih ee ee fie, 2s eT Tw TCT) piN PT s 18 30 AJ <a, ! Bas A ey. i} 8 BH 08 Noe T T a zi 1 | ia sii fT ee 4 £ Bo. wy Bio Pt Ry i Ne = vy So. A Oe OQ ) 9 2 a viz IN nt O20 40 6 86 W WO KO 160 © * "CaseTempeatureveon Ambient Temperature,Ta ~ °C Case Temperature,Tc ~ °C @ No products described or contained herein are intended for use in ‘surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Ml Anyone purchasing any products described or contained Herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.4631-3/3