2SK2159-HF

2SK2159-HF KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

www.kexin.com.cn 1 MOSFET ■ Features

• VDS (V) = 60V
• ID = 2 A
• RDS(ON) ＜ 0.3Ω (VGS = 4V)
• RDS(ON) ＜ 0.5Ω (VGS = 2.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±14 Continuous Drain Current ID 2 Pulsed Drain Current (Note.1) IDM 4 Power Dissipation PD 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±14V ±10 uA Gate Cutt-off Voltage VGS(off) VDS=10V , ID=1mA 0.5 1.1 V VGS=4V, ID=1A 0.3 VGS=2.5V, ID=1A 0.5 VGS=1.5V, ID=0.1A 0.7 Forward Transconductance gFS VDS=10V, ID=1A 0.4 S Input Capacitance Ciss 319 Output Capacitance Coss 109 Reverse Transfer Capacitance Crss 22 Turn-On DelayTime td(on) 38 Turn-On Rise Time tr 128 Turn-Off DelayTime td(off) 237 Turn-Off Fall Time tf 130 Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF ns Ω VGS(on)=3V, VDS=25V, ID=1A,RL=25Ω,RG=10Ω RDS(On) ■ Marking Marking NW F D G Gate protection diode Internal diode S ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish N-Channel MOSFET 2SK2159-HF

www.kexin.com.cn2 MOSF ET ■ Typical Characterisitics DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C dT - Derating Factor - % FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V ID - Drain Current - A TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT I D - Drain Current - A |yfs| - Forward Transfer Admittance - S 0.001 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT I D - Drain Current - A RDS(on) - Drain to Source On-State Resistance - Ω0 0.001 100 00105020152051021090603 0.2 0.5 1 ms 10 ms PW = 100 ms DC 7 V 3.5 V3.0 V2.5 V 2.0 V 1.5 V VGS = 1.0 V 0.001 0.01 0.1 1 2 3 0.01 0.1 0.01 0.1 1 TA = –25 °C 25 °C 75 °C 0.2 0.4 0.6 0.8 1.2 1.4 0.1 1 10 TA = 75 °C 25 °C –25 °C VDS = 10 V VDS = 10 V VGS = 1.5 V TA = 75 °C 25 ° C –25 °C 0.01 Single pulse N-Channel MOSFET 2SK2159-HF

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - Ω0 0.001 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT I D - Drain Current - A RDS(on) - Drain to Source On-State Resistance - Ω CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns SOURCE TO DRAIN DIODE FORWARD VOLTAGE V SD - Source to Drain Voltage - V ISD - Source to Drain Current - A 0.001 0.2 0.6 0.8 1.2 1.4 0.01 1 10 TA = 75 bC 25 C –25 C 100 200 500 1 000 2 5 10 20 50 100 Ciss Coss Crss 100 200 500 1 000 0.2 0.5 1 2 5 100.1 tr td(off) tf td(on) VDD = 25 V VGS(on) = 3 V RG = 10 Ω 0.01 0.1 VGS = 2.5 V VGS = 0 f = 1 MHz 1.0 0.4 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω 0.2 0.4 0.6 0.8 4 6 12 14 ID = 2 A 0.001 0.2 0.6 0.8 1.2 1.4 0.01 1 10 TA = 75 C 25 C –25 C VGS = 4.0 V 1.0 0.4 0.1 ID = 1 A 2 8 10 b b b b b N-Channel MOSFET 2SK2159-HF