2SK2152 SANYO

Document overview

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Technical content

Features

  • Low ON resistance. + Very high-speed switching. - Low-voltage drive. Absolute Maximum Ratings at Ta=25°C unit Drain-to-Source Voltage Vpss 20 v Gate-to-Source Voltage Voss £15 v Drain Current(DC) Ip 2 A Drain Current(Pulse) Ipp PWS 10gs, duty cycleS1% 8 A Allowable Power Dissipation Pp Te=25°C 35 W Mounted on ceramic board 15° #W (250mm? x 0.8mm) Channel Temperature Tch 150 Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unit D-S Breakdown Voltage Viprypss Ip=1mA,Vggs=0 20 v G-S Breakdown Voltage Vamess Ig= +100/A,Vpg=0 £15 v Zero-Gate Voltage Ipss Vps=20V,Vgg=0 100 pA Drain Current Gate-to-Source Leakage Current Igss Vos= £12V,Vps=0 +10 yA Cutoff Voltage Ves) Vps=10V,Ip=1mA 1.0 20 V Forward Transfer Admittance | Yi} Vps=10V,Ip=1A 1.2 2 Ss Static Drain-to-Source Rpson) Ip=1A,Vgs=10V 130 180 mQ ON-State Resistance Rpston) Ip=1A,Ves=4V 170 250 mQ Input Capacitance Ciss Vps=10V,f=1MHz 170 pF Output Capacitance Coss Vps= 10V,f=1MHz 145 pF Reverse Transfer Capacitance Crss Vps= L0V,f=1MHz 50 pF Turn-ON Delay Time tacon) See specified Test Circuit. 10 ns Rise Time tr % 12 ns Turn-OFF Delay Time taom) ” 50 ns Fall Time te a 35 ns Diode Forward Voltage Vsp Ig=2A,Vas=0 1.0 Vv Marking: KJ Package Dimensions 2062A (unit : mm) 45 1.5, Switching Time Test Circuit he] van Voostev Fa nae nie nl J | j ‘i van RL +100 ay Peotone ols vour Ps XK *) 739 04 @ esxeise ett] 1: Gate 3: Source SANYO: PCP sestra (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN N2394TS/41894HO (KOTO) BX-0304 No.4569-1/3

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«J 7] | |} TX ppp tT TN 0 20 40 60 ao wo 120 KO 160 0 y 74) 8) 4) 44) 1.4) 44) 4) Ambient Temperature,Ta — °C Case Temperature,Te — °C. IH No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. HM Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, ° Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.4569-3/3