2SK2112-HF KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 MOSFET ■ Features

  • VDS (V) = 100V
  • ID = 1 A
  • RDS(ON) ＜ 0.8Ω (VGS = 10V)
  • RDS(ON) ＜ 1.2Ω (VGS = 4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 1 Pulsed Drain Current (Note.1) IDM 2 Power Dissipation PD 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 100 V Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Cutt-off Voltage VGS(off) VDS=10V , ID=1mA 0.8 2 V VGS=10V, ID=0.5A 0.8 VGS=4V, ID=0.5A 1.2 Forward Transconductance gFS VDS=10V, ID=0.5A 0.4 S Input Capacitance Ciss 178 Output Capacitance Coss 59 Reverse Transfer Capacitance Crss 16 Turn-On DelayTime td(on) 2.9 Turn-On Rise Time tr 1.7 Turn-Off DelayTime td(off) 60 Turn-Off Fall Time tf 15 Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF ns Ω VGS(on)=10V, VDS=25V, ID=0.5A,RL=50Ω,RG=10Ω RDS(On) ■ Marking Marking NV F Source (S) Internal diodeGate protection diode Gate (G) Drain (D)
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish N-Channel MOSFET 2SK2112-HF

www.kexin.com.cn2 MOSF ET ■ Typical Characterisitics DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 0 30 60 90 120 150 TA - Ambient Temperature - ˚C dT - Derating Factor - % FORWARD BIAS SAFE OPERATING AREA 0.2 0.1 2 5 20 50 100 VDS - Drain to Source Voltage - V ID - Drain Current - A 0.5 1 10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1.0 0.8 0.6 0.4 0.2 VDS - Drain to Source Voltage - V ID - Drain Current - A 10 ms 1 ms PW = 100 ms DC 4.5 V 4.0 V 3.5 V 3.0 V

2.5 V10 V

VGS = 2.0 V TRANSFER CHARACTERISTICS 0.1 0.01 0.001 0.5 1 1.5 2 2.5 3 VGS - Gate to Source Voltage - V ID - Drain Current - A 0.0001 VDS = 10 V TA = 75 ˚C 25 ˚C –25 ˚C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.1 0.001 0.01 0.1 1 ID - Drain Current - A |yfs| - Forward Transfer Admittance - S0.01 VDS = 10 V 25 ˚C 75 ˚C TA = –25 ˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.5 0.01 0.1 1 10 I D - Drain Current - A RDS(on) - Drain to Source On-State Resistance - Ω VGS = 4 V 0.5 TA = 75 ˚C 25 ˚C –25 ˚C Single pulse N-Channel MOSFET 2SK2112-HF

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.5 0.5 0.01 0.1 1 10 ID - Drain Current - A SWITCHING CHARACTERISTICS 100 0.05 0.2 1 5 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.5 0 5 10 20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω ID = 0.5 A 25 ˚C –25 ˚C VGS = 10 V Ciss, Coss, Crss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 500 0.1 0.5 10 100 VDS - Drain to Source Voltage - V VGS = 0 f = 1 MHz 20 500.2 1 2 5 200 100 Crss 0.1 0.5 2 VDD = 25 V VGS(on) = 10 V td(on) tr tf ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTGE 0.01 0.2 0.4 0.7 1 VSD - Source to Drain Voltage - V 0.1 0.001

0.0001 RDS(on) - Drain to Source On-State Resistance - Ω

TA = 75 ˚C Ciss Coss td(off) N-Channel MOSFET 2SK2112-HF