2SK2081-01 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 2SK2081-01
DESCRIPTION
- Drain Current I D= 12A@ TC=25℃
- Drain Source Voltage- : V DSS= 500V(Min)
- Fast Switching Speed
APPLICATIONS
- Switching regulators
- UPS
- DC-DC Converters
- General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 12 A ID(puls) Pulsed Drain Current 48 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
- THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.00 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK2081-01
- ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.0 3.5 V VSD Diode Forward on-Voltage IF= 2IDR ;VGS= 0 1.3 1.95 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 6A 0.45 0.6 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 500 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 2200 3300 pF Crss Reverse Transfer Capacitance 55 85 Coss Output Capacitance 230 345 tr Rise Time VGS=10V; ID=12A; VDD=300V; RL=10Ω ns td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time 110 165 PDF pdfFactory Pro www.fineprint.cn