2SK2080-01R FUJI
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25 . FUJ! POWER MOS-FET a N-CiHANNEL SILICON POWER MOS-FET FAP Il S ER | ES @ Features Outline Drawings @ High speed switching @ Low on-resistance 15:03. B32202 85403 @Nc secondary breakdown 7 358 @Low driving power z @ High voltage Lis? 3 @\\V,.= £30V Guarantee lo } ol 8 © Avalanche-proof aos Py 1 Gate sos ft] § 2 Oi . . i | wg & 3+ Source Applications v Switching regulators sosme| | [usar oot | [sete e@UFS @DC-DC converters JEDEC _ a @ General purpose power amplifier EIAJ — Max. Ratings and Characteristics ival irouit Sch . @Absolute Maximum Ratings(Te=25°C) MiEquivalent Circuit Schematic (unless otherwise specified) items Units Drain (D) Dr in-source voltage Vis 500 Vv Dre in-gate voltage (Ros —20KQ) Youn [500 v__ Cor tinuous drain current_ ly 15 A Pulsed drain current . Tour __| 40 A Gate (G) Gale-source voltage Vas £30 v Source (S) Max. power dissipation Py WwW Opt rating and storage To 150 Cc ter perature range Tu =55~ +150) °C a @Electrical Characteristics(Tc=25°C) (unless otherwise specified) Items [Symbols [Test Conditions| Min. | Typ. | Max. | Units _ Dre in-source breakdown voltage Vewnoss | Ip=ImA Vis =0V V Gat2 threshold voltage Vesom | =IMA___Vos=Ves 25 [3.0 | 3.5 | Vv _ var, ante w a Vis =500V Te =25C | 10 | 500 | A _ZeP Kate voltage drain current | Toss | yo Ta= IC) | 0.2 | 1.0 | mA_ Gate-source leakage current | Toss Vos=+30V Vis=0V. _/- 10 nA Drein-source on-state resistance Rosin | =8A _Ves=10V 0.55 | a Forward transconductance Bo 1,=8A_Vos=25V 5.0 s _Inp it capacitance Ciss Vos=25V 2700 Out gut capacitance: Coss Ves=0V 410 pF Reverse transfer capacitance Cose f =1MHz [| 120 185 _ Turn-on time ton tdian ) any 1 [| 70 110 Gon=tecom tte) te yore T=15A [| 200 | 150 ns Turn-off time torr iden Ro=250 [| 250 | 380 (or =tyorn Ht) ty [Ss [80 120 Avi Janche capability Ty L=100~H “Ta = 25°C Pi | a Cor tinuous reverse drain current Tne [45 A Pulied reverse drain current Tn [| 40 A Dio ie forward on-voltage Vs» Iv=2XIne Ves=0V To =25C} | 1 | (1.65 Vv Reverse recovery time _ ti Te=ln Ves =0V [400 ns Reverse recovery charge Qe d/h =100A/us Tw =25C [4 fT @Thermal Characteristics Items Units Syed eactepan Runion-a) channel to air [ y 30 c/w Thermal resistance Rineneg | channel to case ee A A2-392
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0 ” 20 30 50 0 50 wo 150 Vos(v) Teal'C) Typical Output Characteristics Drain-Source on-State Resistance vs. Ten yl pl ° noo “ClelelopT amie wa Tana fl |o= {(Vos) : 8048 pulse test. Ros(on)= # (10) : 80us pulse test, Ter= 25°C T] vos 2 6 Tene 28 jp Cor H serdegeet<a! eC occ ayo oat Tieeeetiet CeCCCCeCCe eee a COCOA HH eH Ce PO ye H CAR os | ol PO a in eo HT ae 4 EAE ESE lb COCO Rosey §— FLEE 2 i CoCr a) Py j-t-—H @ POORER ered COT eal Pay ° oh yy A Chet tt ty et AL EERE EEE tv of PET LY rr rr (OEE errr ° 2 4 6 8 0 Vos(V) (A) Typical Transfer Characteristics Typical Drain-Source on-State Resistance vs. lo ® 6 eae dT , wT See eecacitites aa aaa 1 Vos= Vos, |= mA: Co CA POPP SS PET | Teen »o LEO TI ee eaneae conan [Pas HoT CoA CoE CFEC Laat | HEFCE enestvy sere 1 LOE dere | ote YLT Nocesy terese Vom Pee ELA pe saaenee TT AEE TTT Tie s) Bo SRREnaES a aes eames nana oe sand GHMRREEREERTEEL SauSESeeRRen08 oO LOTT TTT) 9 0 20 30 40 o 50 0 150 to(A) Ten(°C) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Ten A2-393
FUJI POWER MOS-FET 2SK2080-01R ——_EL POWER MOS-FET 2K 2080-011 sae ees | Oa FEE Om Fae): Ves OV. t= Te ae Vos= (Qo): }o=15A IAAL Keer tet aa reeeeee ert AC | ete a a com + bak yy 12 LI Pp Pore | ae TOov Vy 250V [| © tree Te eh a | } CSS Yat ERSEE EERE ont ‘ saaiacaataes aan pian Hr eA RSET, Vos(V} Qginc) Typical Capacitance vs. Vos Typical Input Charge 10 pe 100 an SS “TAHA , Bao a LET Terr \\ Fee Pee CONT "=== SSS SSeS ot NG PT a EEE Jotf oF TN Feaaee aaa ot LTT Fa Sana Ci] 4 : : NY wl LTT] C7 LOTT 0 05 10 1 0 50 w0 150 Vso(V} Te("C) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T: ===. Fae a Li ee eanl! _ 1 Se (i |o-fate See abs eC Tm rt foe Ui TTY 0 1 os 0? 107" we 10! 10° io! 10? 10 t(S) Vos(V) Transient Thermal Impedance Safe Operating Area A2-394
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