2SK2074 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Large | Y¢g | - Small Ciss - Very low noise figure. Absolute Maximum Ratings at Ta = 25°C unit Drain-to-Source Voltage Vpsx 15 v Gate-to-Drain Voltage Veps -15 Vv Gate Current Ig 10 mA Drain Current Ip 50 mA Allowable Power Dissipation Pp 300 mW Junction Temperature Tj 150 °c Storage Temperature Tstg ~—55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit G:D Breakdown Voltage Viercps Ig=—10xA,Vpg=0 15 Vv Gate-to-Source Leakage Current Igsg Vgs= —10V,Vps=0 -1.0 nA Cutoff Voltage Vesiom Vps=5V,Ip=100nA -0.3 -06 -12 V Drain Current Ipss Vps=5V,Vgs=0 6.0K 20.0% mA Forward Transfer Admittance | Yq | Vps=5V,Vgs=0, f=1kHz 20 30 mS Input Capacitance Ciss Vps=5V,Vgs=0,f=1MHz 9.5 pF Reverse Transfer Capacitance Crss Vps=5V,Vgs=0, f=1MHz 2.7 pF Noise Figure NF Vps=5V,Rg=1k0,Ip=1mA, 0.5 dB f=1MHz %& : The 25K2074 is classified by Ipgg as follows (unit : mA) 6.0 F 12.0 | 10.0 G 20.0 Package Dimensions 2034 (unit: mm ) . . 22 hep 80 — rm Pe SSS ts an eo fi eee |? D: Drain on G: Gate S: Source SANYO: SPA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . N3093TH (KOTO) A8-9449 No.4499-1/3
20 Ib - Vos 20 'b_- Vos
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2 Ves(off) ~ loss Ciss - Vps
Vps=5V Vgs=0V i as PLLILL gp] | Pee og th 2a = |] ¢ - PPE Ss > a <| g ¢ _ r i agit TT Try yy
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Saturation Drain Current,Ipss — mA Drain-toSource Voltage,Vps - V ___SaturtionDrainCurrenttnss =A DrtintoSoureeVoltasiVos~ Vo No.4499-2/3
Crss = Vos NF - f fe 10 s = 10 = i eee ee Ie tmA 1 f=1MHz Ip=1mA ft fd Rg=1kQ) | a a? : g g | | oe = & 6 3 — 5. POOPR Sc 3 4 | ~ Fad & i ail | : ENE ETL & 10 i 2 Nd PN 3 7 efi [iy ui ry Ty ° Bipeemeeeeeees 1.0 10 10 100 1k 10k took DraimtoSource Voltage,Vps - V Frequency,f — Hz NF _~ Rg Pp - Ta
10 Vpo=av = 350
Ip=1mA € x0 f=1kHz 1 a! 2a INTE 3 + 950 IN GUAT \\ & | 3 IN z £200 Sooo NT a N i Pe IN Ey 3 & 100 pS ANIC 3 p PCCP
9 Pe <= 6
10 1k 10k 10k 71M 0 20 40 60 8 MW WO MO 160 Signal Source Resistance,Rg — 9 Ambient Temperature,Ta —°C IB No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, eee No.4499-3/3