2SK2052-R FUJI

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DEVICE NAME : Power MOSFET TYPE_NAME : 2SK2052-—R SPEC._No. : Fuji Electric Co,Ltd , This Specification is subject to change without notice. a Fuji Electric Co.Ltd Coult a |_| vecxeo| ; YE ni os : ror} Y 0257-R-004a

  1. Scope This specifies Fuji power MOSFET 2SK2052-R 2. Construction N-channel enhancement mode power MOSFET . - 3. Application for switching . , 4. Outview TO-3PF Outview See to 4/10 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) fisirsuneotee [ve | fv [| iam oer disintin [Pe | wf wp 6. Electrical characteristics at Tc=25°C (unless otherwise specified) Static ratings Description Symbo! Condi tions Unit Pie Pe [am | Drain-source lo =ImA breakdown voltage | BVoss | Ves=0V Vv Gate threshold 1o =10mA voltage | Ves(th) | Vos=Ves 2.1 3.0 4.0 Vv drain current Ves= OV - Gate-source Ves=+20V leakage current Vos= OV na Drain-source on- lo = 5A state resistance | Ros(on)| Ves=10 V 0. 80 Q . ¢ | Fuji Electric Co,Ltd. g Y. 4 [~] Y 0257-R-003a

Description Symbo! Unit - Pie [im oe | || Forward lo =5A : transconductance |g fs Vos=25 V 4 Ss Vos=25V f =IMHz Reverse transfer capacitance Crss 15 110 pF Turn-on time Vec=300V lo = 10A Turn-off time Reverse diode Teese] Description Symbol Conditions Diode forward le =Llor on-voltage . Vso Ves=OV, Ten= 25° 0.95] 1.8 Vv Reverse recovery le =Jor time ter Ves=0V 150 200 ns -dl¢/dt=100A/ps Reverse recovery Ten= 25° charge 0.75 ue 1. Thermal resistance Description Symbol! Conditions Pin [| Thermal resistance renwal g as - . z 3 Fuji Electric Co,Ltd. 2 . VA co A Y 0257-R-003a

FUJI POWER MOSFET . TYPE + 2SK2052-R 15.5£0.3 | 50. D3 # 3 20 5 a 3.2°% i fo] , | i | 4 Trade mark {J Type name | eS g | Sk2052 u es = a > i Lot No. a a ie n(n H iH yl 1.6#0.3 2 ees Hy =tai-—t & i if td S HOO s fs f +8) , fi i Hi Pre-Solder q 6, i 18 0.6 “8 om omo oo lr] ee} Le (0) ® © CONNECTION @ GATE @ DRAIN @ source DIMENSIONS ARE IN MILLIMETERS. Fuji Electric Co,Ltd. ;| vA ro

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PD=f (TC) 1008 . & : : a : : Q Se otto 100 ; 150 Safe operating area : ID=f (VDS) :D=0.01,Tc=25°C - 104 q woe cee ee eee ee : @ tus DIIIIIIIDITITITITI OS crewmen gwnnmm enn, “SO Sus DC : SN NE 194th... gant NS tgs a DON ON. teaus .t “S an : : oS spins : * Not : : No . : : Stam : : ‘ : : j : : Laems ia Pr iin ti 40? vos vi Fuji Electric Co,Lid. VA C cH : Y 0257-R-003a

Typical output characteristics ID=f(VDS):804s pulse test, Tch=25°C 25 : - 20 ee 20V 15V qy eV. fv. A 5 : af : : e 18 95 OO 38 Typical Transfer Characteristic : ID=f(VGS):804s pulse test, VDS=25V, Tch=25'C : 25 : =] : : a : : 0 2 csm 4 6 [ J} Fuji Electric Co,Ltd. A Ke = Y 0257-R-003a

gfs=f(ID):80us pulse test, VDS=25V, Tch=25'°C 45 - ‘b / : : : i) 5 10 45 20 25 DA Typical Drain-source on-state resistance RDS (on)=f(1D):80u4s pulse test, Tch=25'c en) a : : s : : yy = "20v : Q : : : : 9 5 10 45 20 DA Ss | 7 I Fuji Electric Co,Ltd. g % H- ‘ 5 IC FAS Y 0257-R-003a

Drain-source on-state resistance RDS (on) =f (Tch) : ID=5A, VGS=10V 3 , - § : : : 6 : : : ; ~50 (7) Teh tor? 100 150 Gate threshold voltage : VGS (th)=f (Tch) : VDS=VGS, ID=10mA Senn 4 : , : : ~50 i} Teh ror? 100 150 Fuji Electric Co,Lid. g i. ct o | Y 025T-R-003a

Typical gate charge characteristics VGS=f (dg): ID=10A 500 10ev’ 20 ° . : 1 /250V : : “ff sow Ss 300 wetter teney (Te 125 “t on 4 8 eo g 8 58 108 150 Qgtncl . Typical capacitances . C=f (VDS) : VGS=OV, f=1MHz 10! : ° : Cres to : : : [) 18 28 30 40 VOS (VI Fuji Electric Co,Ltd. A ! No I Y 0257-R-003a

Farward characteristic of revese diode . IF=f(VSD):804s pulse test, Tch=25°C 102 . 4 : : . tet : : 8.8 a5 Le Ls Vso (VI . Transient thermal . : impedance Zthch-c=f(t) parameter:D=t/T , Lat, : & | Yo: : : tet : : : : ‘ 16-3 18-4 18> 10°? 10-4 ide 161 tS) [Ty ws . . G [I Lt A 1% Fuji Electric Co,lid. iC == Y 0257-R-003a