2SK2051-L FUJI

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2SK2051 -L S FUJI POWER MOS-FET er N-CHANNEL SILICON POWER MOS-FET F-II SERIES Features Outline Drawings @ High speed switching @Lcw on-resistance 3 45102 +8 + ass0z ®@Nv secondary breakdown ro 5 [ape fe 3 fee cw driving power Pts @ | * @ High voltage = ole) & ott @V,;=+30V Guarantee w2e0e Fie : =f: 5] * wzs02 rs = fle . . . oem ot 08202 | out Applications ssaoe | Posse ome 3 eno @ Switching regulators e urs Gee @DU-DC converters © General purpose power amplifier L~type M Max. Ratings and Characteristics Mi Equivalent Circuit Schematic @At solute Maximum Ratings(Tc= 25°C) (unless otherwise specified) _— hems Units Drain 0) Dr tin-source voltage Vos Vv Dr iin-gate voltage (Res = 20KQ) Von 250 Vv Co xtinuous drain current I, 10 A Pa sed drain current — [logan [28 [A Gate Gh Source (S) _ Ga :e-source voltage Vos £30 Vv ~ Max. power dissipation Pp 80 W Op:rating and storage Ten 150 C ter perature range Tas Cc @Elc-ctrical Characteristics(Tc=25'C) (unless otherwise specified) _— Items | Symbols | __Test Conditions | Min. | Typ. [ Max. [ Units Dritin-source breakdown voltage Viwwoss Ip=lmA__ Ves=0V 250 || Vv Ga‘ threshold voltage Vosuny Ip=imA___Vos=Ves 25 | 3.0 [35 [ V 7 . Vos =250V T= 25°C 10 | 500 | vA Zevo gate voltage drain current Toss Vee=0V T= 1256 0.2 10 mA Ga e-source leakage current Tess Ves= +30V_Vns=0V. 10 | 100 | nA Driin-source on-state resistance Rosiom Th=5A Ves=l0V | | 03 0.4 a Fo. ward transconductance Bis 1>=5A__Vps=25V. 4.5 Ss Ingut capacitance Cis Vos=25V [| 570_| 860 Ou put capacitance Coss Ves=0V [| aac") 220] pF Re''erse transfer capacitance Coss f =1MHz | 70 | 0 | (ton=taon +t) ETT) Ves Tem a0 a0], Tu ‘n-off time torr tdorn R..=250 [100 [150] (tore = tacos tte) tr —_— | | 0 Conitinuous reverse drain current Ion [| fae A Pulsed reverse drain current Jon [a Dicde forward on-voltage Vsp Ip=2XToe Ves=O0V_ Ta =25'C{] [1.12 | Vv Reverse recovery time tr Tp=Ipr Ves=0V [| 140] ns Reverse recovery charge Qe -Up/A=100A/us Tn =25C f [0.85 | [| a @Th ermal Characteristics Items. [ Symbols | __Test Conditions [| Min. [ Typ. [ Max. | Units F i Rove [| channel to air 5 CW A2-380

2SK2051-L, S FUJI POWER MOS-FET SS Mi Characteristics 30 1.0) SU REPATLEESRREEeS st Srend SURGMERRTEREY cd EEeueOeCnanenunnEe pot pe ganannya nanan oe eee 4 CEPT ATT TTT SCEPC ae CEE ear Ho areas eaitecoaae lb 4 ay Annee [| Rosow 04 f- fC Hp epee iz PO [Pry rr eee EECCA a SUsUEREEEEREY eeceeANiATEReeeence [AT soy CEE EE EERE EH o BEEP EEE bv a oO 5 10 6 50 0 50 100 150 Vos(V) TaCC) Typical Output Characteristics Drain-Source on-State Resistance vs. Teh 20|— vec 2 BV. a 4.5V755V 11 Pry = sn a A | ws SLY Z feoy rovt = sev TPT — tt ar or on | ee (oT a | on | t] CIC 4 | a oe —=—— tt] ee Hh of] | i [FE - » “OP 7| Rosen = Tr oo AY} oo = 0 eee @) eA oe oe ecememet 7 [p44 ee a oo aa (ore (EEE Cr Ves(V) If) Typical Transfer Characteristics Typical Drain-Source on-State Resistance vs. lo 8 6 zane amet Snenee™ HH Vos(tn)= # (Ten) : Vos= Ves. mH ARBRUEMEURREESODREEES PPr rh y eel nanSRD a Cocco Zanene IPT Ty yy ey Caer a Ltt Sanae4annEne 4 |_| | ve] | Saw waanae (g CCE Ey PEPPERS Tea 2 L © CR 0 ACCCCC COE ESTES Taaneen BRUMERREEED [TTT PTT yet ry y UaEuaueTuWEREa HH Ce oO TEE rr o LETT TT TT TT I | 0 5 10 6 20 0 50 100 150 (A) Tex('C) Typical Forward Transconductance vs. |p Gate Threshold Voltage vs. Tch A2-381

FUJI POWER MOS-FET 2SK2051-L, S 1S === 250 Ce T 20 CCA eee 200 4 | VE |, RELEELEELEET ETT S777 i eseeeeeena! SER FAAS, Nan ee ae \\ CLA 125V c LNs Ves 0 7 ry ye Me (nF) "ESS SSS eeeee sO) \\ VY ™) ESEgGee22s-=eo =e Pansies Coo H cI - HA J 50 NAVAN 200 rt 4 Gnalsss00000 00000 a wT TTT naan | NAEEE 30 40 0 0 20 30 40 50 Vos{V) Qg(nc)} Typical Capacitance vs. Vos Typical Input Charge | ‘00 Sor veo ts wise et S| HH HHH A eo wl BERRERERER LOL 2 BERNGE an Saseeeaeese==ee oe N maa a HEA HA Wo \\ » on ee ta) ot = w) 1 LNG SSrstsrccecarts *CCEEETEEET EH mi TI IN Reecaiil sails (COCO i) 05 10 18 0 50 100 150 VeolV) Te('C) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T:

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[= 1e= f(Vos):D=0.01, Te=25% cat Sint 10us CH | 7H | ee eee 4 as mani maT oe eee ESE SSH. E Zee EES te te, col LTS Ee [| Papeete be Etat te oti. lly Pi Tah wl rc 0 ot 0 0? 107 0° 10! 10° 10" 108 10° t(S) Vos{V) Transient Thermal Impedance Safe Operating Area A2-382

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