2SK2033-3 KEXIN

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www.kexin.com.cn 1 MOSF ET N-Channel MOSFET 2SK2033 ■ Features

VDS (V) = 20V
ID = 100mA
RDS(ON) ＜ 12Ω (VGS = 2.5V)
Low threshold voltage: Vth = 0.5~1.5 V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current ID 100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 20 V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±10V ±1 uA Gate threshold voltage VGS(th) VDS=3V ID=100uA 0.5 1.5 V Static Drain-Source On-Resistance RDS(On) VGS=2.5V, ID=10mA 12 Ω Forward Transconductance gFS VDS=3V, ID=10mA 25 50 ms Input Capacitance Ciss 8.5 Output Capacitance Coss 3.3 Reverse Transfer Capacitance Crss 9.3 Turn-On DelayTime td(on) 160 Turn-Off DelayTime td(off) 150 pF VGS=0~2.5V, VDS=3V, ID=10mA VGS=0V, VDS=3V, f=1MHz ns ■ Marking Marking KP 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 MOSFE T N-Channel MOSFET 2SK2033 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET 2SK2033 ■ Typical Characterisitics