2SK2028-01MR FUJI
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2SK2028-01MR FUJI POWER MOS-FET SDSS N-CHANNEL SILICON POWER MOS-FET FAP IIA SERI ES @ Features HOutline Drawings @High speed switching { @ Low on-resistance noros , gaat a5t02 ®@No secondary breakdown / 27802 @ Low driving power es a @ High voltage 3/3 ¥ @Vs= +30V Guarantee loea| ae 1 Gale 2+ Deon @ Avalanche-proof 12e02 iF are 3+ Source woth 3] 2 . . vy Applications {L ov02 06% ®@ Switching regulators 25ne0 mi soete cree @UPS @DC-DC converters Lveoee J General purpose power amplifier SC-67 _ M Max. Ratings and Characteristics . ireuit Sch . @Absolute Maximum Ratings(Tc=25°C) a Equivalent Circuit Schematic (unless otherwise specified) Items. Units Drain (D) _Drain-source voltage 600 Vv __Drain-gate voltage (Res =20KQ) 600 Vv Continuous drain current ee ee “Pulsed drain current A Gate @) Gate-source voltage £30 Vv Source (S) Max. power dissipation 50 W Operating and storage 150 Cc temperature range Cc @Electrical Characteristics(Tc=25°C) (unless otherwise specified) Items ‘Symbols Test Conditions [-Min. | Typ. | Max. | Units Drain-source breakdown voltage Veoguss | Io=ImA _Vos=0V | 60 [fT Gate threshold voltage | Ves [T= ImAVis=Ves | 2.5 [8.0 | 38 | age dra ; Vos = 600V TH=2C | [10 | 500_[ aA Zero gate voltage drain current Toss Ves=0V [T.=25C, [02 | 10] mA Gate-source leakage current Ves=£30V_ Vos =0V [| 10 | 100 | nA Drain-source on-state resistance I=4A Va=0V_ es Forward transconductance 1,=4A_Vps=25V 4 fe TT Ss Input capacitance Vos =25V _ 2200 Output capacitance Ves=0V | io [210 | pF Reverse transfer capacitance £ =IMHz 30 “Turn-on time ton =30V L= [| 20 atta tuontt) vou PA aE ns : Ros =100 (torr =taorn tte) tr a Avalanche capability Tay L=100¢H To, =25°C a Continuous reverse drain current__| Tov [CCBA Pulsed reverse drain current en 32 | A Diode forward on-voltage Tp=2%Tox Ves=0V_ Ta =25C] | 1.0 | 1.5 Vv Reverse recovery time te Te=Ipr Ves=0V [| 450 | ns Reverse recovery charge Q. rdI/d=100A/us Tr=25C [| 3 | | uc @Thermal Characteristics Items Units ‘Thermal resivance [Ronan | chamasl to sie a CW [ Ruy | channeltocase TCT 2S CW A2-365
FUJI POWER MOS-FET 2SK2028-01MR @ Characteristics or v ov | A FREE EEE wa Oo ar I He ian HH CT Are CE fe Lr ne? 49720 a “HH Eo COOP eee ae Nasr aces mt @ ‘eee TH A aan aon co nVuRana a Zeca CCH HHH 0 0 20 30 50 0 50 100, 150 Vos(V) Ten(*C) Typical Output Characteristics Drain-Source on-State Resistance vs. Teh " [| 1o= 4 (Vos) sus pulse test, i | ‘ Ros(on)= # (1p) : 80us pulse test. Ten= 25°C | voresy. Tas2se gy Ftv ooo CCE eee schoo Hee CPTTt HS TH Hoe HEH i a i |--— a COE TET POOR Seeaeeet SEEUEEE BEE aavagy i — HH | i NZ b a i [| Rosow CEO eZ iv J a “TPE Tr eee ree S00S000) SeSee See FREE EEC ee AL TT The it H Uy oe EEE EEE TH Ves(V) tolA} Typical Transfer Characteristics Typical Drain-Source on-State Resistance vs. lo 20) -H+ ofs= (10): 80x8 pulse test, Lt OL Vos(tn)= (Teh): Vos=Ves, 1o= Tm (|| He Vos=25V Ton=25°C - [il iz [| | - a ET aesePNauMUTTAEAIIBIL on ESRC, EEE oy“ SERRE EEA CT pe ee : 1 HP EEE SE eH IUEAMHEMERALL ALLELE oS EEE HEH A 0 5 10 6 20 =50 0 50 100 150 fo(A) Ter(C) Typical Forward Transconductance vs. Io Gate Threshold Voltage vs. Ten A2-366
- 2SK2028-01MR FUJI POWER MOS-FET a che diet 0 eS SSE se EEE omterey ten cee SNSR CoCo SOE R REC eCpp E A PTT eee ROCCE 400 7 20 WPA Prt \\ | L [ [| ol LECT | J SASASRREEREES SSS SSS peceeesaseeeeecccae= Fale be ERASERS RES FFA FA PT er Lit So JT rT Wve: | CLEFT | c ETN | [ecrn itt | Vos 200 ta 48 0v Zam 10 Ves otf NL Ere | [VER seov | Ee vice (nF) ESE SSS (vy [te AIRS toy (v) FESRS EERE SRR et LAA IT 300v Er = Err = CAC eT i2av cas PaCS os \\ Ze | rl AETRAAUAGRRAAEAR CAN TTT COLE eC ATT TT 12 SSSR, 0 0 20 30 40 oO 40 80 120 Vos(V) Qg(nc) Typical Capacitance vs. Vos Typical Input Charge 0 ees 80) E 1r= £(Vs0) : 8028 pulse test. SES KH HH H+ Tew tse Pet a | CoH wi LL oS FR im rT FESPA He LARS Coco POOSRGe0 4000008 oT PNG Coo [=== === === CI CNECECa Ie os fc pm Tf | PTI aan w Fee oe w ON roo ELC I COPS EEE ee oo PAT FE Fee 2 Coo H PoPeNS oP COL rT COO rs VsotV) Tel'C) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T: Sep Se J rei ote ease f Jeera Ol) EP SE ES eee | EE ous Sa ad whe SRN (K/w) FERS eet (a) Rea HES ESS SH east THT RSC o. Shane 0.0 2 Seo see 4 PR eee SZC 001 Sa Toh = o> A earn ia eT f= Td 7 weil rt wl cE 0% tot 0 we 107 10° 10! 0 10! 10? co +(S) Vest) Transient Thermal Impedance Safe Operating Area A2-367
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