2SK2020-01MR ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor 2SK2020-01MR
DESCRIPTION
- DrainCurrent–ID=3.5A@TC=25℃
- DrainSource Voltage- :VDSS=500V(Min)
- FastSwitching Speed
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Switching regulators
- UPS
- DC-DCconverters
- Generalpurpose poweramplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-SourceVoltage(VGS=0) 500 V VGS Gate-SourceVoltage ±30 V ID DrainCurrent-continuous@TC=25℃ 3.5 A ID(puls) Pulseddraincurrent 14 A Ptot TotalDissipation@TC=25℃ 30 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 4.17 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 62.5 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscN-ChannelMosfetTransistor 2SK2020-01MR
- ELECTRICALCHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=1mA 500 V VGS(th) GateThresholdVoltage VDS=VGS; ID=1mA 2.5 3.0 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=1.5A 2 3 Ω IGSS Gate-BodyLeakageCurrent VGS= ±30V;VDS=0 ±100 nA IDSS ZeroGateVoltageDrainCurrent VDS=500V;VGS=0 500 µA VSD ForwardOn-Voltage IS=7A;VGS=0 1.65 V Gfs ForwardTransconductance VDS=25V；ID=1.5A 1.5 S tr RiseTime VGS=10V; ID=3.5A; VDD=300V; RL=10Ω 10 15 ns td(on) Turn-onDelayTime 15 25 tf FallTime 15 25 td(off) Turn-offDelayTime 40 60