2SK2000-R FUJI

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DEVICE NAME L Power MOSFET TYPE NAME : 2SK2000-R SPEC._No. : Fuji Electric Co.Ltd This Specification is subject to change without notice. Fuji Electric Co,Ltd a : a=" a ee E fo a Y 0257-R-004a

  1. Scope This specifies Fuji power MOSFET 2SK2000-R 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview TO-3PF Outview See to 4/10 page 5. Absolute maximum ratings at Tc=25°C (unless otherwise specified) Description | Symbol | Characteristics | Unit | Remarks Drain-source voltage | Vos 100 | Vv | Drain-gate voltage Voor 100 Vv | Res=20KQ i iH Continuous Drain current \\ i) = 32 A | Pulsed drain current | | oputee + 128 A ' Gate-source voltage | Ves + 20 | Vv i Maximum power dissipation | Po 80 | Ww | : Operating and storage | Ten 150 | Cc : temperature range | Tets -55 ~ +150 | 6. Electrical characteristics at Tc=25°C (unless otherwise specified) Static ratings Characteristics Description Symbo! Conditions Fin. | Unit Drain-source lo =1mA | breakdown voltage | BVoss | Ves=0V Vv Gate threshold 10 =10mA voltage | Ves(th) | Vos=Ves 24 3.0 4.0 Vv i Zero gate voltage | loss Vos=100V) Ten= 25°C 10 500 | uA | drain current Ves= OV [tose | T en2 125 0.2 | 10 | mn Gate-source Vos=£20V | leakage current Vos= OV 10 100 nA | Drain-source on- 15 = 16A state resistance Ros(on) | Ves= 10V 0.05 Q - . rT] Y 0257-R-003a

Description Symbo! Conditions Unit ia [im | we | Forward lo = 16A transconductance | 9 fs | Vos= 25V 20 Ss Input capacitance | Ciss 2000 | 3000 pF | Vos=25V f =1NHz Reverse transfer | | capacitance Crss | 120 180 | pF Turn-on time Vec=30V lo = 3A 1 td(off) | Res=500 { 350, 500 | ns | Turn-off time ! tf { 120 | 180 | as | Reverse diode Characteristics | Description Symbo | Conditions Unit Min. Typ. | Max. Diode forward (es =2X lor on-vol tage Vso Ves=0V, Ten=25°C 1.5 | 2.0 Vv Reverse recovery le =lor time tee Ves=0V -dle/dt=100A/us Reverse recovery Ten =25°C charge Qre ue 1. Thermal resistance Description Symbo! Condi tions [win | ep Thermal resistance ean +. . P| yo} Y 0257-R-003a

Type name | S a) 3 sk2000 | 8] | § 3 al | Lot No. Pt Oo Bm w | tH ly | 1.6+0.3 iy, iy, HA Hf i i ll By att03 € td it i" oS iY 4 Hy w H 4 Hy HO tH Hy HH Pre-Solder on | Y Y o t 1 | 1158 0.6 “8? 5.45402 5.4520.2 3.5402 T ' aa) {am} | om | | | OD © © CONNECTION @ GATE @ DRAIN @ source DIMENSIONS ARE IN MILLIMETERS. Y 0257-R-003a

PD=f (TC) 420 — — : f ; : 1 c : : ] : : | t : : | : : 4 @ 50 100 153 Tete) Safe oprating area ID=f (VDS) :D=0.01, Tc=25°C : tons : i : i 48 i 19° 104 162 16> vos Fuji Electric Co,Lid. z| Yo Y 0257-R-003a

Typical output characteristics ID=f(VDS):80us pulse test, Tch=25°C 8a aa : ny: : w : 3 4 : 4 6e a We : i I . : wv 4 ze &£ Wy j 2 ff : : 4 / : j : : BV j : j 3 ae A L a7 8 10 20 33 YDS [VI Typical Transfer Characterisic ID=f(¥GS):80us pulse test, VDS=25V, Tch=25°C g po oe es a i -- 1) 3 18 Vis v1 g 6 Y 0257-R-003a

gis=f(ID):80s pulse test, VDS=25V, Tch=25°C Co : : : : J 3 13 20 38 4B By Iw Typical Drain-source on-state resistance RDS (on)=f(ID):80u4s pulse test, Tch=25°C 4v 4 Sv 3. B} ev ‘ wv g I: : : q : : Z sev i : Z 28 8. 88 i i i + @ 20 40 68 80 IDA Y 0257-R-003a

Drain-source on-state resistanse RDS (on)=f (Tch) : ID=16A, VGS=10V 8.18 a spec : 3 : : : 1 a" 8 : : : — E : | ~58 3 30 160 158 Teh tT) Gate threshold voltage VGS (th)=f (Tch) : VDS=VGS, ID=10mA = : : : ae : : : tu. -58 a EY) 108 158 Teh(T! 3| 8 Fuji Electric Co,Lid 2 %o EI Y 0257-R-003a

Typical gate charge characteristics VGS=f (Qg) : 1D=32A, Tch=25°C 10a — prt 7 : 28 ' : : : 28V F : : : : sev \\ : : ; vant : : : i

8 Fy 48 68 a8 100

Qg (nel Typical capacitances C=f (VDS) : VGS=0V, f=1MHz . : : Ciss = E ; : : Coss : : : 4 192 oi : oat () 10 20 38 48 YDS lv) Y 0257-R-003a

Farward characteristic of revese diode IF=f(VSD):80us pulse test 103, , : : Toh=25 | i i 2 z / j | : : 4 e 1 z 3 VSD (VI Transient thermal impedance Zthch-c=f(t) parameter: D=t/T 12 : : : : a ie-3 16-* 18-? 18? 104 108 462 tS} 3 t i Fuji Electric Co,Ltd. :| YY oo baad i Y 0257-R-003a