2SK1985-01MR FUJI

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2SK1985-01MR FUJI POWER MOS-FET eS N-CHANNEL SILICON POWER MOS-FET FAP A SERIES @ Features @ Outline Drawings @High speed switching @ Low on-resistance wis, 9323 b502 a 2 @!lo secondary breakdown | 21802 @ low driving power Res o @ High voltage =| 3/2 @\\'cs= +30V Guarantee [oss 1 Ge © /\\valanche-proof pal ; ; oe wo Tht S| . . yy Applications | o7s02 oo? © <iwitching regulators zseson| [esse aad e@uPS @[)C-DC converters JEDEC — @(3eneral purpose power amplifier SC-67 @ Max. Ratings and Characteristics Equivalent Circuit Schemati @ Absolute Maximum Ratings(Te=25'C) Equivalent Circuit Schematic ‘unless otherwise specified) _ Items. [ Symbols | Ratings | Units Drain (D) “Tirain-source voltage Vos [900 | __lirain-gate voltage (Ros = 20K) Voce [900 | OV ~ Continuous drain current i 5 A ~TVulsed drain current Towa | 20 A Gate (G) ~“Cate-source voltage Ves | +30 V Source (S) “Max. power dissipation TL Po 50 W. Qperating and storage Ten 150 c _tomperature range Tae C @:lectrical Characteristics(Tc=25°C) (unless otherwise specified) _ Items [Symbols [Test Conditions | Min. | Typ. | Max. | Units ~_Iirain-source breakdown voltage ‘Viomoss Tp=ImA__Ves=0V | 900 [| Vv _ Gate threshold voltage Vesan, I=1mA___ Vos=Ves 3.5 Vv ; in curr Vos =900V [ Tw=2c [7 [id | 500 | uA __Gate-source leakage current loss Ves=+30V_ Vys=0V F| 10 | 100 [| nA ~Tirain-source on-state resistance Rosiom Tp=2.5A_Ves=10V [25 | 28 | 8 __Vorward transconductance Sis 1,=2.5A Vos =25V 2 | 5 [| | § ~Thput capacitance Coss Vos =25V [__ [1300 “Output capacitance Cos Ves=0V [7 [0150] pF “_lteverse transfer capacitance Coss {_=1MHz [| 3 | 85 | U-On ME ta ‘deny meupv Losa ___hton = team + te) te Vg=10V hs “Surn-off time tom td R= 100 [80] 120_] (torr = tewoen tte) t, a [25 [| 40 | “Avalanche capability Tay L=100¢H Ta =25'C 5 | | | A _ Continuous reverse drain current Ton Te=25°C Tr [| 5 [| A ~ Pulsed reverse drain current Thaw Te=25'C 2 [| A _ Diode forward on-voltage Vou Ts=2XIpx_ Vog=0V_ Tan = 25°C. fai | 1.65 [Vv TTeverse recovery time tye Ty=Tox Vos=0V [400 [| ns __leverse recovery charge Qs -d-/d,=100A/us Ta=25°C [| 3 | @ ‘hermal Characteristics = Items [ Symbols | ___ test Conditions | Min. [ Typ. | Max. | Units “shermal resistance Rio» | channeltoair TT “c/w A2-320

2SK.1985-01MR FUJI POWER MOS-FET eS Characteristics 10 lo=f (Vos): 80pe pulee teat, Tch=25°C " hob dytelrenysibea,'sh; beetioy 4 4 ately Sow tL tH Seal eee 8 WAL 8, OV j id _. cos — MARR nae | | At SERIO HTAPLGATEY an AEARANEANIE YAN HA Tete (A) (a) Lt PAH Ct ) ae yf a reo a nae PEER R ERR Petry ov 20 ~~ 40 250 0 30 100 150 Vos(V) ToC) Typical Output Characteristics On State Resistance vs. Tch " lost (vse) :80ps putea tone | a Roe (on}er (10) 80g pun tas 7 HEP Ten=25°C . yesh rev | Co ef “AT SHEE oh +H CCC ms roo I PT (a) [ET (a) 8 ‘ janera =n Le beat ow Atte! | ToT Lf 0 2 4 6 8 10 o 2 4 6 8 10 Ves(V) WolAL Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lo is T TT 5 r - = ae ore eer se = _ ft Vex (on)se (Ton) :¥ar ee In=Ie& ° ao “HS cae] | FRE EEA Er UPPER re I gfs £4 Vason) 2 : H t ain ieee! @ epee wo fA PAR OE | aoe AAEAATADEREDOEN 1 : of 2 4 6 8 10 859 0 50 100 150 InfA) Ten(*C) Typical Forward Transconductance vs. |o Gate Threshold Voltage vs. Tch A2-321

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