2SK1982-01MR FUJI

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2SK1982-01MR FUJI POWER MOS-FET A N-CHANNEL SILICON POWER MOS-FET FAP A SERIES Features Outline Drawings @ High speed switching @Lcw on-resistance wots, 328 ust02 @Nv secondary breakdown 27202 @Low driving power [8] 3 @ High voltage -—— g 2 @V.s= +30V Guarantee loos | s 1 Gate

2 Dat

@Avalanche-proof vaweH f Ft, 3) see wothi 2/2 ¥ i Applications [[o7t02 oo wo. esusoz | [1 2502 27202 ®@ Switching regulators eUuPS @DC-DC converters — © General purpose power amplifier SC-67 @ Max. Ratings and Characteristics Mi Equivalent Circuit Schemati @Asolute Maximum Ratings(Tc= 25°C) quivalent Lircurt ecnematic (unless otherwise specified) Items [ Symbols ] Ratings | Units Drain (D) Drain-source voltage Vos _v ~ Drain-gate voltage (Res = 20K) Voce __500 Vv Ccntinuous drain current To 10 A ° Ptised drain current Topas A Gate (G) Gc te-source voltage Ves Vv Source (S) Mix. power dissipation Pp W Orerating and storage Tex °C | teinperature range Tow Cc @El2ctrical Characteristics(Tc=25°C) (unless otherwise specified) Items Units Drain-source breakdown voltage ‘Vosayss Ip=ImA____Ves=0V. [so [ [| [Vv Gate threshold voltage Vesany Ip=1mMA___Vos=Vos Vv co gat 4 Vos=500V [T= [| 1 | 500 | uA _Zero gate voltage drain current loss Ve=0Vv Ta=isCl 0.2 10) mA Gi te-source leakage current Toss Ves=£30V Vos=0V | | 30 100 Tn Drain-source on-state resistance Rosiom Tp=5A__Vos=10V [0.6 | 0.76 2 Ferward transconductance Bis Ip=5A_Vps=25V. Ss Inout capacitance Cus Vos = 25V | _[_ 1500 | 2200 __0v tput capacitance Coss Ves=0V | [160 | 240 pF ~ Reverse transfer capacitance Crss f_ =1MHz [35] 50 Turn-on time ton doom es ee ee Vec=300V Ip= tos = tan +t) t yen [o=}0a ee Turn-off time tor tdior Ro=100 [| 70 | 100 __ tent =taoon tte) ty es [60 [90 ‘Avalanche capability Tay L=100¢H_ Ten=25°C | 1 | | A Ccntinuous reverse drain current | lox | A Pulsed reverse drain current Toms 4 [A Diode forward on-voltage Vv Tp=2XIne Vos=0V Ta =25C] | 1.12 | 1.70 Vv Reverse recovery time tr Tralon Ves=0V [450] as Reverse recovery charge Qe -dly/d=100A/us Ta=25C [| [| 3 [ [4S @Thiermal Characteristics Items. [ Symbols [Test Conditions | Min. | Typ. | Max. 7 Units ; : Rov | channel to air TT 62.8 CW A2-311

FUJI POWER MOS-FET 32SK1982-01MR eee aci @ Characteristics 20, A FOC 28 FER= in Barnes sae H secooicSoMso des e LEE vansev ay vey en) See EE FA rN Saat PEREEETTine GAEL CoCr Hea Coo ooo vit FR ger sev COPPER ea svuugiar’cteessaet ssueesweeess=ércces 0 fA 10 4 4 COCOA oo i | Sey Ze==== EES SY ER eet ve. bo Pooper aaakeen Reson Oe ee eet «a POA Sse c) § COCbRecp ee Frc soo Coo Cee Tier Creo EEA “eee Le EERE La ARSE EEC (ASS EE Eee eC)

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VostV) ToC) Typical Output Characteristics Drain-Source on-State Resistance vs. Tch “Coe CoA See KH 1o= (Vos): 80xs pulse test, oan {—] Ros(on)= f (10); 80s pulse test, Tch= 25°C [HH Vos=25V Tene 25°C aaa al aon eee a COCO ee Loo ESE ® CoCo RAE hE EH cece ia FeCcoor PE «sy 1 CEEEEEHE HH PTT rT a COP ret im SS ae . H on | SECC EEE Eee os oT 6) )=©6 PC Hee HEE R aE oy CEA cet ian) ostomy A fr, COCeeccroot [| a VAL eee EHH] (OB “A ee eee PE ERE ee SS EEeneseé— Caeette ry coool Cleeeeeen re ns | +} PREP A of] Ca rr aaa By op Corr 5 6 20 Vas(V) re) Typical Transfer Characteristics Typical Drain-Source on-State Resistance vs. lo To oe a aa rr i = - Fy rll} gent) Has poles fost man Hi Veos(th)= £ (Ton) : Vos= Ves, |= 1mk | [Pf Voss one TTT] Ly a CEPT yr i ES a CERO COCO EEEE EE Re ES Gage = om 4 eee eee Seeamanee=Seeseneye efebec ees HH PEERS CoP Rear 0 7 OO Oo | COCO eee Ree ee ee =

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COP CECE ee EERE EE EE EEE EEE ay oa Mo See ere eee ee eee Ja 2eeSeRReee, Coco EEE | 1 a rt Gee eee eee EEREE ERE A OD | PO eee a 7 | of DETTE TTT TT Tre eCO CCE EC eee 9 5 0 8 20 80 p) 50 100 150 (A) Te("C) Typical Forward Transconductance vs. Io Gate Threshold Voltage vs. Ten A2-312

2SK1982-01MR FUJI POWER MOS-FET ech aac eee atte

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FE] o= FVo: Vers Ov. f= tie FES Ef ver=F(n: test oa tf a a BESS EE ESE ee ae a To ov RE ov HER He ay osha SS c Vos 200 4 v 4A v o LEXIE] ve Re eae Ve oe CA FESR SSE RSE oo PA A EE a 00 ae ees = Ald EEC Cee EAR wtL LTT TTT TT] 7 SEES, 0 10 20 30 40 0 2 40 60 80 Vos(V3 Ag(nc) Typical Capacitance vs. Vos Typical Input Charge 10, a 80; ==—— === oo Se ee PT PTT rrr CET I ten=2 50 rir Ket by EE Cor Corer oACER ee LTTE ET AT PA ee ee al NL) os ss CAC PSEPE Teer - 40| i or). FRR fy LLL Bo EEEEEEEN EET ========—==S=——— ah ESE a A A | a oy HS i HAE ASN wLT TTT TTT TTT (ECE EC BS 0 05 10 15 ‘ Vs0(V) TCC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T: eee ss ee ee See Fare aa ee) on oe ae a oe ett meee vo ATTEN ae TT Eee Sas ary ear eet ERI EA eee oc See om capt | SSeS Jews Seo “TLP. eae ww) ee A — cio OM ot Ee Ct CH SSH on coe 9° = F4 rit | we LIM TM TN TT ST 10? 10 we we ot 10° 10! 10 10" 0 10° 18) Vos) Transient Thermal Impedance Safe Operating Area A2-313

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