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Silicon Junction FETs (Small Signal) unit: mm 2SK198 Silicon N-Channel Junction FET For low-frequency amplification n Features l High mutual conductance gm l Low noise type l Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1: Source JEDEC: TO-236 2: Drain EIAJ: SC-59 3: Gate Mini Type Package (3-pin) n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol V DSX V GDO ID IG PD Tch Tstg Ratings -30 150 150 -55 to +150 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Input capacitance (Common Source) Reverse transfer capacitance (Common Source) Noise figure Symbol IDSS * IGSS V GSC gm C iss C rss NV Conditions V DS = 10V, VGS = 0 V GS = -30V, VDS = 0 V DS = 10V, ID = 10mA V DS = 10V, ID = 0.5mA, f = 1kHz V DS = 10V, VGS = 0, f = 1kHz V DS = 10V, VGS = 0, f = 1MHz V DS = 30V, ID = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 0.5 - 0.1 max -100 -1.5 Unit mA nA V mS pF pF mV * IDSS rank classification Marking Symbol (Example): 1O 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9±0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4±0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 typ 3.5 Runk IDSS (mA) Marking Symbol P 0.5 to 3 1OP Q 2 to 6 1OQ R 4 to 12 1OR
Silicon Junction FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VGS gm ¾ VGS gm ¾ ID C iss, Coss ¾ VDS C rss ¾ VDS NF ¾ f 2SK198 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 2 10826 4 Ta=25˚C VGS =0V – 0.2V – 0.4V – 0.3V – 0.1V Drain to source voltage VDS (V) Drain current ID (mA ) 9.6 8.0 6.4 4.8 3.2 1.6 Ta=75˚C 25˚C –25˚C VDS =10V Gate to source voltage VGS (V) Drain current ID (mA ) VDS =10V Ta=25˚C IDSS =5.0mA 2.0mA Gate to source voltage VGS (V) Mutual conductance gm (mS ) 08 26 4715 3 VDS =10V Ta=25˚CIDSS =5.0mA 2.0mA Drain current ID (mA ) Mutual conductance gm (mS ) 1 3 10 30 100 f=1MHz VGS =–3V Ta=25˚C C iss C oss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) 1 3 10 30 100 VGS =–3V f=1MHz Ta=25˚C Drain to source voltage VDS (V) Reverse transfer capacitance (Common source) Crss (pF) 11 0 1 0 2 103 105 VDS =10V ID =5.2mA Ta=25˚C R g=500W 1kW Frequency f (Hz) Noise figure NF (dB)